Depinning of the Fermi level at the Ge Schottky interface through Se treatment

V. Janardhanam; Hyung Joong Yun; Jouhan Lee; V. Rajagopal Reddy; Hyobong Hong; Kwang Soon Ahn; Chel Jong Choi

doi:10.1016/j.scriptamat.2013.09.004

Depinning of the Fermi level at the Ge Schottky interface through Se treatment

V. Janardhanam
, Hyung Joong Yun
, Jouhan Lee
, V. Rajagopal Reddy
, Hyobong Hong
, Kwang Soon Ahn^*
, Chel Jong Choi

^*Corresponding author for this work

Department of Semiconductor Science and Technology

Research output: Contribution to journal › Journal article › peer-review

11 Scopus citations

Abstract

Depinning of the Fermi level at Al/Ge junctions was achieved through Se treatment. Al contacts to n- and p-type Ge with Se treatment exhibited ohmic and Schottky behaviors, respectively. During Se treatment, in addition to surface passivation by Se atoms, the chemical reaction between Se and Ge resulted in the formation of a partially ionic Se-Ge alloy film. This led to the reduction of surface states, which was responsible for the Fermi-level depinning of Ge.

Original language	English
Pages (from-to)	809-811
Number of pages	3
Journal	Scripta Materialia
Volume	69
Issue number	11-12
DOIs	https://doi.org/10.1016/j.scriptamat.2013.09.004
State	Published - 2013.12

Keywords

Fermi-level depinning
Ge
Se treatment
Se-Ge alloy film

Quacquarelli Symonds(QS) Subject Topics

Engineering - Mechanical
Materials Science
Physics & Astronomy

Access to Document

10.1016/j.scriptamat.2013.09.004

Cite this

@article{384dc1ceb4394bd3999fc461d6a84cc8,

title = "Depinning of the Fermi level at the Ge Schottky interface through Se treatment",

abstract = "Depinning of the Fermi level at Al/Ge junctions was achieved through Se treatment. Al contacts to n- and p-type Ge with Se treatment exhibited ohmic and Schottky behaviors, respectively. During Se treatment, in addition to surface passivation by Se atoms, the chemical reaction between Se and Ge resulted in the formation of a partially ionic Se-Ge alloy film. This led to the reduction of surface states, which was responsible for the Fermi-level depinning of Ge.",

keywords = "Fermi-level depinning, Ge, Se treatment, Se-Ge alloy film",

author = "V. Janardhanam and Yun, \{Hyung Joong\} and Jouhan Lee and Reddy, \{V. Rajagopal\} and Hyobong Hong and Ahn, \{Kwang Soon\} and Choi, \{Chel Jong\}",

year = "2013",

month = dec,

doi = "10.1016/j.scriptamat.2013.09.004",

language = "English",

volume = "69",

pages = "809--811",

journal = "Scripta Materialia",

issn = "1359-6462",

number = "11-12",

}

TY - JOUR

T1 - Depinning of the Fermi level at the Ge Schottky interface through Se treatment

AU - Janardhanam, V.

AU - Yun, Hyung Joong

AU - Lee, Jouhan

AU - Reddy, V. Rajagopal

AU - Hong, Hyobong

AU - Ahn, Kwang Soon

AU - Choi, Chel Jong

PY - 2013/12

Y1 - 2013/12

N2 - Depinning of the Fermi level at Al/Ge junctions was achieved through Se treatment. Al contacts to n- and p-type Ge with Se treatment exhibited ohmic and Schottky behaviors, respectively. During Se treatment, in addition to surface passivation by Se atoms, the chemical reaction between Se and Ge resulted in the formation of a partially ionic Se-Ge alloy film. This led to the reduction of surface states, which was responsible for the Fermi-level depinning of Ge.

AB - Depinning of the Fermi level at Al/Ge junctions was achieved through Se treatment. Al contacts to n- and p-type Ge with Se treatment exhibited ohmic and Schottky behaviors, respectively. During Se treatment, in addition to surface passivation by Se atoms, the chemical reaction between Se and Ge resulted in the formation of a partially ionic Se-Ge alloy film. This led to the reduction of surface states, which was responsible for the Fermi-level depinning of Ge.

KW - Fermi-level depinning

KW - Ge

KW - Se treatment

KW - Se-Ge alloy film

UR - https://www.scopus.com/pages/publications/84885611739

U2 - 10.1016/j.scriptamat.2013.09.004

DO - 10.1016/j.scriptamat.2013.09.004

M3 - Journal article

AN - SCOPUS:84885611739

SN - 1359-6462

VL - 69

SP - 809

EP - 811

JO - Scripta Materialia

JF - Scripta Materialia

IS - 11-12

ER -

Depinning of the Fermi level at the Ge Schottky interface through Se treatment

Abstract

Keywords

Quacquarelli Symonds(QS) Subject Topics

Access to Document

Other files and links

Fingerprint

Cite this