Depth profiles of vacancy-type defect in Si⁺-implanted GaAs resulting from rapid thermal annealing

Depth profiles of vacancy-type defects in the active region of annealed Si⁺-implanted GaAs were measured by means of the monoenergetic positron beam measurements. Parabolic-type distributions for vacancy-type defects in the depth below the surface were observed in two-step annealed Si⁺-implanted GaAs. Activation properties by Hall measurements were improved by a two-step rapid thermal annealing technique, whereas the concentration of vacancy defects in active layer below the surface is not changed.