TY - GEN
T1 - Design of GaN-based light-emitting diodes with enhanced lateral light extraction
AU - Kim, Hyunsoo
AU - Kim, Seongjun
AU - Park, Youngjun
PY - 2010
Y1 - 2010
N2 - We have investigated enhanced light extraction of GaN-based light-emitting diodes (LEDs) by design of mesa-holes.1 Based on Snell's law, the geometry of mesa-holes acting as lateral exits for guided mode could be optimized. The LED fabricated with mesa-holes showed a 27% enhancement in output power as compared to reference LED, which was in agreement with optical ray-tracing calculations.
AB - We have investigated enhanced light extraction of GaN-based light-emitting diodes (LEDs) by design of mesa-holes.1 Based on Snell's law, the geometry of mesa-holes acting as lateral exits for guided mode could be optimized. The LED fabricated with mesa-holes showed a 27% enhancement in output power as compared to reference LED, which was in agreement with optical ray-tracing calculations.
UR - https://www.scopus.com/pages/publications/79951737074
U2 - 10.1109/COMMAD.2010.5699780
DO - 10.1109/COMMAD.2010.5699780
M3 - Conference paper
AN - SCOPUS:79951737074
SN - 9781424473328
T3 - Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD
SP - 61
EP - 62
BT - 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings
T2 - 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010
Y2 - 12 December 2010 through 15 December 2010
ER -