Detailed analysis and performance limiting mechanism of Si delta-doped GaAs tunnel diode grown by MBE

Seokjin Kang; Gun Wu Ju; Jung Wook Min; Dong Seon Lee; Yong Tak Lee; Hyo Jin Kim; Kwangwook Park

doi:10.7567/JJAP.57.120306

Detailed analysis and performance limiting mechanism of Si delta-doped GaAs tunnel diode grown by MBE

Seokjin Kang
, Gun Wu Ju
, Jung Wook Min
, Dong Seon Lee
, Yong Tak Lee
, Hyo Jin Kim
, Kwangwook Park

Electronic Materials Engineering

Gwangju Institute of Science and Technology
Korea Photonics Technology Institute
National Renewable Energy Laboratory
Korea Advanced Nano Fab Center

Research output: Contribution to journal › Journal article › peer-review

7 Scopus citations

Abstract

High-performance GaAs tunnel diodes (TDs) are fabricated by using Si delta-doping technique. The GaAs TDs exhibited a high peak tunnel-current density of 2,735 A/cm² and low specific resistivity of 1.46 × 10^-4 Ω•cm². However, the performance of the GaAs TDs deteriorated once the amount of Si delta doping exceeded a certain limit, which has been rarely reported elsewhere. Detailed analyses and numerical simulations of GaAs TDs with various amounts of Si delta doping prove that Si amphoteric behavior governs the performance limit. GaAs TDs with precisely controlled Si delta doping are suitable for cutting-edge tandem solar cell applications.

Original language	English
Article number	120306
Journal	Japanese Journal of Applied Physics
Volume	57
Issue number	12
DOIs	https://doi.org/10.7567/JJAP.57.120306
State	Published - 2018.12

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10.7567/JJAP.57.120306

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@article{693d651eacf64a368db1d14063c8c382,

title = "Detailed analysis and performance limiting mechanism of Si delta-doped GaAs tunnel diode grown by MBE",

abstract = "High-performance GaAs tunnel diodes (TDs) are fabricated by using Si delta-doping technique. The GaAs TDs exhibited a high peak tunnel-current density of 2,735 A/cm2 and low specific resistivity of 1.46 × 10-4 Ω•cm2. However, the performance of the GaAs TDs deteriorated once the amount of Si delta doping exceeded a certain limit, which has been rarely reported elsewhere. Detailed analyses and numerical simulations of GaAs TDs with various amounts of Si delta doping prove that Si amphoteric behavior governs the performance limit. GaAs TDs with precisely controlled Si delta doping are suitable for cutting-edge tandem solar cell applications.",

author = "Seokjin Kang and Ju, \{Gun Wu\} and Min, \{Jung Wook\} and Lee, \{Dong Seon\} and Lee, \{Yong Tak\} and Kim, \{Hyo Jin\} and Kwangwook Park",

note = "Publisher Copyright: {\textcopyright} 2018 The Japan Society of Applied Physics.",

year = "2018",

month = dec,

doi = "10.7567/JJAP.57.120306",

language = "English",

volume = "57",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

number = "12",

}

TY - JOUR

T1 - Detailed analysis and performance limiting mechanism of Si delta-doped GaAs tunnel diode grown by MBE

AU - Kang, Seokjin

AU - Ju, Gun Wu

AU - Min, Jung Wook

AU - Lee, Dong Seon

AU - Lee, Yong Tak

AU - Kim, Hyo Jin

AU - Park, Kwangwook

PY - 2018/12

Y1 - 2018/12

N2 - High-performance GaAs tunnel diodes (TDs) are fabricated by using Si delta-doping technique. The GaAs TDs exhibited a high peak tunnel-current density of 2,735 A/cm2 and low specific resistivity of 1.46 × 10-4 Ω•cm2. However, the performance of the GaAs TDs deteriorated once the amount of Si delta doping exceeded a certain limit, which has been rarely reported elsewhere. Detailed analyses and numerical simulations of GaAs TDs with various amounts of Si delta doping prove that Si amphoteric behavior governs the performance limit. GaAs TDs with precisely controlled Si delta doping are suitable for cutting-edge tandem solar cell applications.

AB - High-performance GaAs tunnel diodes (TDs) are fabricated by using Si delta-doping technique. The GaAs TDs exhibited a high peak tunnel-current density of 2,735 A/cm2 and low specific resistivity of 1.46 × 10-4 Ω•cm2. However, the performance of the GaAs TDs deteriorated once the amount of Si delta doping exceeded a certain limit, which has been rarely reported elsewhere. Detailed analyses and numerical simulations of GaAs TDs with various amounts of Si delta doping prove that Si amphoteric behavior governs the performance limit. GaAs TDs with precisely controlled Si delta doping are suitable for cutting-edge tandem solar cell applications.

UR - https://www.scopus.com/pages/publications/85057422296

U2 - 10.7567/JJAP.57.120306

DO - 10.7567/JJAP.57.120306

M3 - Journal article

AN - SCOPUS:85057422296

SN - 0021-4922

VL - 57

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 12

M1 - 120306

ER -

Detailed analysis and performance limiting mechanism of Si delta-doped GaAs tunnel diode grown by MBE

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