Detailed carrier recombination in lateral composition modulation structure

Kwangwook Park; Sooraj Ravindran; Seokjin Kang; Jung Wook Min; Hyeong Yong Hwang; Young Dahl Jho; Yong Ryun Jo; Bong Joong Kim; Jongmin Kim; Yong Tak Lee

doi:10.7567/APEX.11.095801

Detailed carrier recombination in lateral composition modulation structure

Kwangwook Park
, Sooraj Ravindran
, Seokjin Kang
, Jung Wook Min
, Hyeong Yong Hwang
, Young Dahl Jho
, Yong Ryun Jo
, Bong Joong Kim
, Jongmin Kim
, Yong Tak Lee

Electronic Materials Engineering

National Renewable Energy Laboratory
Indian Institute of Space Science and Technology
Gwangju Institute of Science and Technology
King Abdullah University of Science and Technology
Korea Advanced Nano Fab Center

Research output: Contribution to journal › Journal article › peer-review

2 Scopus citations

Abstract

Carrier recombination in lateral composition modulation (LCM) GaInP was probed in detail using time-resolved photoluminescence (TR-PL) and transmission electron microscopy (TEM). Upon SiO₂ passivation, the time-transient decay of the PL peak was slower, and carrier lifetime was significantly enhanced from 25 to 230 ps for passivated LCM GaInP in comparison with that of bulk GaInP. This is due to the suppressed surface recombination of the irregular and wavy surface of LCM GaInP observed by TEM. Temperature-dependent TR-PL also showed a large decrease in carrier lifetime with an increase in temperature, indicating the dominance of Shockley-Read-Hall recombination due to the nonperiodicity of the LCM structure.

Original language	English
Article number	095801
Journal	Applied Physics Express
Volume	11
Issue number	9
DOIs	https://doi.org/10.7567/APEX.11.095801
State	Published - 2018.09

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@article{91123db9c1c54e9989dda36a24cfc879,

title = "Detailed carrier recombination in lateral composition modulation structure",

abstract = "Carrier recombination in lateral composition modulation (LCM) GaInP was probed in detail using time-resolved photoluminescence (TR-PL) and transmission electron microscopy (TEM). Upon SiO2 passivation, the time-transient decay of the PL peak was slower, and carrier lifetime was significantly enhanced from 25 to 230 ps for passivated LCM GaInP in comparison with that of bulk GaInP. This is due to the suppressed surface recombination of the irregular and wavy surface of LCM GaInP observed by TEM. Temperature-dependent TR-PL also showed a large decrease in carrier lifetime with an increase in temperature, indicating the dominance of Shockley-Read-Hall recombination due to the nonperiodicity of the LCM structure.",

author = "Kwangwook Park and Sooraj Ravindran and Seokjin Kang and Min, \{Jung Wook\} and Hwang, \{Hyeong Yong\} and Jho, \{Young Dahl\} and Jo, \{Yong Ryun\} and Kim, \{Bong Joong\} and Jongmin Kim and Lee, \{Yong Tak\}",

note = "Publisher Copyright: {\textcopyright} 2018 The Japan Society of Applied Physics",

year = "2018",

month = sep,

doi = "10.7567/APEX.11.095801",

language = "English",

volume = "11",

journal = "Applied Physics Express",

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TY - JOUR

T1 - Detailed carrier recombination in lateral composition modulation structure

AU - Park, Kwangwook

AU - Ravindran, Sooraj

AU - Kang, Seokjin

AU - Min, Jung Wook

AU - Hwang, Hyeong Yong

AU - Jho, Young Dahl

AU - Jo, Yong Ryun

AU - Kim, Bong Joong

AU - Kim, Jongmin

AU - Lee, Yong Tak

PY - 2018/9

Y1 - 2018/9

N2 - Carrier recombination in lateral composition modulation (LCM) GaInP was probed in detail using time-resolved photoluminescence (TR-PL) and transmission electron microscopy (TEM). Upon SiO2 passivation, the time-transient decay of the PL peak was slower, and carrier lifetime was significantly enhanced from 25 to 230 ps for passivated LCM GaInP in comparison with that of bulk GaInP. This is due to the suppressed surface recombination of the irregular and wavy surface of LCM GaInP observed by TEM. Temperature-dependent TR-PL also showed a large decrease in carrier lifetime with an increase in temperature, indicating the dominance of Shockley-Read-Hall recombination due to the nonperiodicity of the LCM structure.

AB - Carrier recombination in lateral composition modulation (LCM) GaInP was probed in detail using time-resolved photoluminescence (TR-PL) and transmission electron microscopy (TEM). Upon SiO2 passivation, the time-transient decay of the PL peak was slower, and carrier lifetime was significantly enhanced from 25 to 230 ps for passivated LCM GaInP in comparison with that of bulk GaInP. This is due to the suppressed surface recombination of the irregular and wavy surface of LCM GaInP observed by TEM. Temperature-dependent TR-PL also showed a large decrease in carrier lifetime with an increase in temperature, indicating the dominance of Shockley-Read-Hall recombination due to the nonperiodicity of the LCM structure.

UR - https://www.scopus.com/pages/publications/85054300792

U2 - 10.7567/APEX.11.095801

DO - 10.7567/APEX.11.095801

M3 - Journal article

AN - SCOPUS:85054300792

SN - 1882-0778

VL - 11

JO - Applied Physics Express

JF - Applied Physics Express

IS - 9

M1 - 095801

ER -

Detailed carrier recombination in lateral composition modulation structure

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