Abstract
A new Zener transient voltage suppressor (TVS) consisting of abrupt junctions of epitaxial layers has been developed. Differential resistance in the breakdown region is obtained as low as 5 Ω, and the reverse leakage current is substantially suppressed by one to two orders of magnitude compared to a conventional Zener diode. The reliability of the TVS is confirmed based on its maximum allowed reverse current level and the robustness of its electrostatic discharge endurance against ±8 kV of the human body model (HBM) at a wide range of operating temperatures (30°C to 180°C). This significant improvement is primarily attributed to the abrupt junction profile formed by low-temperature processes, followed by epitaxial growth technology prohibiting redistribution of dopant elements.
| Original language | English |
|---|---|
| Pages (from-to) | 59-62 |
| Number of pages | 4 |
| Journal | Electronic Materials Letters |
| Volume | 5 |
| Issue number | 2 |
| DOIs | |
| State | Published - 2009.06 |
Keywords
- Avalanche
- Breakdown
- Epitaxy
- ESD
- HBM
- LED
- TVS
- Zener
Quacquarelli Symonds(QS) Subject Topics
- Materials Science
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