Dielectric properties of (K0.4Na0.6)2(Sr0.6Ba0.4)4Nb10O30 thin films fabricated by RF magnetron sputtering method

G. Park; J. Sel; S. Bu; I. H. Song

doi:10.1016/S0038-1098(99)00187-8

Dielectric properties of (K_0.4Na_0.6)₂(Sr_0.6Ba_0.4)₄Nb₁₀O₃₀ thin films fabricated by RF magnetron sputtering method

G. Park^*
, J. Sel
, S. Bu
, I. H. Song

^*Corresponding author for this work

Department of Physics

Sogang University
Seoul National University

Research output: Contribution to journal › Journal article › peer-review

10 Scopus citations

Abstract

The (K_0.4Na_0.6)₂(Sr_0.6Ba_0.4)₄Nb₁₀O₃₀ thin films, which belong to the morphotropic phase boundary region of (1-z) Sr₂NaNb₅O₁₅-(z)Ba₂KNb₅O₁₅ binary system, were fabricated by RF magnetron sputtering method on Pt/Ti/SiO₂/Si substrates at a substrate temperature of 400 °C. We have studied X-ray diffraction (XRD) patterns and dielectric properties for the as-deposited films and the films annealed in the temperature range between 700 and 900 °C to investigate the effect of post-deposition annealing on their crystallinity. When the annealing temperature is increased to 900 °C, the XRD pattern shows peaks with a distribution of relative intensity similar with that of the bulk ceramic, and the dielectric constant is increased from 43 to 122 at a measuring frequency of 100 kHz under the room temperature. The experimental results are discussed in comparison with those of the bulk ceramic.

Original language	English
Pages (from-to)	125-129
Number of pages	5
Journal	Solid State Communications
Volume	111
Issue number	3
DOIs	https://doi.org/10.1016/S0038-1098(99)00187-8
State	Published - 1999.06.16

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@article{708f493afebe4f1cab458e56e5d87499,

title = "Dielectric properties of (K0.4Na0.6)2(Sr0.6Ba0.4)4Nb10O30 thin films fabricated by RF magnetron sputtering method",

abstract = "The (K0.4Na0.6)2(Sr0.6Ba0.4)4Nb10O30 thin films, which belong to the morphotropic phase boundary region of (1-z) Sr2NaNb5O15-(z)Ba2KNb5O15 binary system, were fabricated by RF magnetron sputtering method on Pt/Ti/SiO2/Si substrates at a substrate temperature of 400 °C. We have studied X-ray diffraction (XRD) patterns and dielectric properties for the as-deposited films and the films annealed in the temperature range between 700 and 900 °C to investigate the effect of post-deposition annealing on their crystallinity. When the annealing temperature is increased to 900 °C, the XRD pattern shows peaks with a distribution of relative intensity similar with that of the bulk ceramic, and the dielectric constant is increased from 43 to 122 at a measuring frequency of 100 kHz under the room temperature. The experimental results are discussed in comparison with those of the bulk ceramic.",

author = "G. Park and J. Sel and S. Bu and Song, \{I. H.\}",

year = "1999",

month = jun,

day = "16",

doi = "10.1016/S0038-1098(99)00187-8",

language = "English",

volume = "111",

pages = "125--129",

journal = "Solid State Communications",

issn = "0038-1098",

number = "3",

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TY - JOUR

T1 - Dielectric properties of (K0.4Na0.6)2(Sr0.6Ba0.4)4Nb10O30 thin films fabricated by RF magnetron sputtering method

AU - Park, G.

AU - Sel, J.

AU - Bu, S.

AU - Song, I. H.

PY - 1999/6/16

Y1 - 1999/6/16

N2 - The (K0.4Na0.6)2(Sr0.6Ba0.4)4Nb10O30 thin films, which belong to the morphotropic phase boundary region of (1-z) Sr2NaNb5O15-(z)Ba2KNb5O15 binary system, were fabricated by RF magnetron sputtering method on Pt/Ti/SiO2/Si substrates at a substrate temperature of 400 °C. We have studied X-ray diffraction (XRD) patterns and dielectric properties for the as-deposited films and the films annealed in the temperature range between 700 and 900 °C to investigate the effect of post-deposition annealing on their crystallinity. When the annealing temperature is increased to 900 °C, the XRD pattern shows peaks with a distribution of relative intensity similar with that of the bulk ceramic, and the dielectric constant is increased from 43 to 122 at a measuring frequency of 100 kHz under the room temperature. The experimental results are discussed in comparison with those of the bulk ceramic.

AB - The (K0.4Na0.6)2(Sr0.6Ba0.4)4Nb10O30 thin films, which belong to the morphotropic phase boundary region of (1-z) Sr2NaNb5O15-(z)Ba2KNb5O15 binary system, were fabricated by RF magnetron sputtering method on Pt/Ti/SiO2/Si substrates at a substrate temperature of 400 °C. We have studied X-ray diffraction (XRD) patterns and dielectric properties for the as-deposited films and the films annealed in the temperature range between 700 and 900 °C to investigate the effect of post-deposition annealing on their crystallinity. When the annealing temperature is increased to 900 °C, the XRD pattern shows peaks with a distribution of relative intensity similar with that of the bulk ceramic, and the dielectric constant is increased from 43 to 122 at a measuring frequency of 100 kHz under the room temperature. The experimental results are discussed in comparison with those of the bulk ceramic.

UR - https://www.scopus.com/pages/publications/0032648548

U2 - 10.1016/S0038-1098(99)00187-8

DO - 10.1016/S0038-1098(99)00187-8

M3 - Journal article

AN - SCOPUS:0032648548

SN - 0038-1098

VL - 111

SP - 125

EP - 129

JO - Solid State Communications

JF - Solid State Communications

IS - 3

ER -

Dielectric properties of (K_0.4Na_0.6)₂(Sr_0.6Ba_0.4)₄Nb₁₀O₃₀ thin films fabricated by RF magnetron sputtering method

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