Differential body-factor technique for characterization of interface traps in MOSFETs

Daeyoun Yun; Minkyung Bae; Jaeman Jang; Hagyoul Bae; Ja Sun Shin; Euiyeon Hong; Jieun Lee; Dae Hwan Kim; Dong Myong Kim

doi:10.1109/LED.2011.2160709

Differential body-factor technique for characterization of interface traps in MOSFETs

Daeyoun Yun^*
, Minkyung Bae
, Jaeman Jang
, Hagyoul Bae
, Ja Sun Shin
, Euiyeon Hong
, Jieun Lee
, Dae Hwan Kim
, Dong Myong Kim

^*Corresponding author for this work

Division of Electronic Engineering

Kookmin University

Research output: Contribution to journal › Journal article › peer-review

14 Scopus citations

Abstract

A differential body-factor technique (DBT) is proposed for characterization of interface traps in MOSFETs employing the differential body factor d, m/d, V_{\rm GS} instead of the subthreshold slope or the body factor itself. The DBT is independent of the threshold voltage variation and advantageous to apply to MOSFETs with strong nonlinearity in the subthreshold slope caused by a nonuniform distribution of traps over the band gap. We applied the DBT to n-and p-MOSFETs with W/L = 5/0.13, 5/0.18, and 2/0.13 μ mμ on the same wafer and obtained identical results. Extracted interface trap density ranges D _it = 10¹⁰-10¹¹cm^-2e_V ^-1 with a U-shaped distribution over the band gap.

Original language	English
Article number	5983393
Pages (from-to)	1206-1208
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	32
Issue number	9
DOIs	https://doi.org/10.1109/LED.2011.2160709
State	Published - 2011.09

Keywords

Analytical modeling
coupling factor
differential body factor
interface state
metal-oxide-semiconductor field-effect transistor (MOSFET)
subthreshold slope
trap

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10.1109/LED.2011.2160709

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title = "Differential body-factor technique for characterization of interface traps in MOSFETs",

abstract = "A differential body-factor technique (DBT) is proposed for characterization of interface traps in MOSFETs employing the differential body factor d, m/d, V\textbackslash{}rm GS instead of the subthreshold slope or the body factor itself. The DBT is independent of the threshold voltage variation and advantageous to apply to MOSFETs with strong nonlinearity in the subthreshold slope caused by a nonuniform distribution of traps over the band gap. We applied the DBT to n-and p-MOSFETs with W/L = 5/0.13, 5/0.18, and 2/0.13 μ mμ on the same wafer and obtained identical results. Extracted interface trap density ranges D it = 1010-1011cm-2eV -1 with a U-shaped distribution over the band gap.",

keywords = "Analytical modeling, coupling factor, differential body factor, interface state, metal-oxide-semiconductor field-effect transistor (MOSFET), subthreshold slope, trap",

author = "Daeyoun Yun and Minkyung Bae and Jaeman Jang and Hagyoul Bae and Shin, \{Ja Sun\} and Euiyeon Hong and Jieun Lee and Kim, \{Dae Hwan\} and Kim, \{Dong Myong\}",

year = "2011",

month = sep,

doi = "10.1109/LED.2011.2160709",

language = "English",

volume = "32",

pages = "1206--1208",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

number = "9",

}

TY - JOUR

T1 - Differential body-factor technique for characterization of interface traps in MOSFETs

AU - Yun, Daeyoun

AU - Bae, Minkyung

AU - Jang, Jaeman

AU - Bae, Hagyoul

AU - Shin, Ja Sun

AU - Hong, Euiyeon

AU - Lee, Jieun

AU - Kim, Dae Hwan

AU - Kim, Dong Myong

PY - 2011/9

Y1 - 2011/9

N2 - A differential body-factor technique (DBT) is proposed for characterization of interface traps in MOSFETs employing the differential body factor d, m/d, V\rm GS instead of the subthreshold slope or the body factor itself. The DBT is independent of the threshold voltage variation and advantageous to apply to MOSFETs with strong nonlinearity in the subthreshold slope caused by a nonuniform distribution of traps over the band gap. We applied the DBT to n-and p-MOSFETs with W/L = 5/0.13, 5/0.18, and 2/0.13 μ mμ on the same wafer and obtained identical results. Extracted interface trap density ranges D it = 1010-1011cm-2eV -1 with a U-shaped distribution over the band gap.

AB - A differential body-factor technique (DBT) is proposed for characterization of interface traps in MOSFETs employing the differential body factor d, m/d, V\rm GS instead of the subthreshold slope or the body factor itself. The DBT is independent of the threshold voltage variation and advantageous to apply to MOSFETs with strong nonlinearity in the subthreshold slope caused by a nonuniform distribution of traps over the band gap. We applied the DBT to n-and p-MOSFETs with W/L = 5/0.13, 5/0.18, and 2/0.13 μ mμ on the same wafer and obtained identical results. Extracted interface trap density ranges D it = 1010-1011cm-2eV -1 with a U-shaped distribution over the band gap.

KW - Analytical modeling

KW - coupling factor

KW - differential body factor

KW - interface state

KW - metal-oxide-semiconductor field-effect transistor (MOSFET)

KW - subthreshold slope

KW - trap

UR - https://www.scopus.com/pages/publications/80052026803

U2 - 10.1109/LED.2011.2160709

DO - 10.1109/LED.2011.2160709

M3 - Journal article

AN - SCOPUS:80052026803

SN - 0741-3106

VL - 32

SP - 1206

EP - 1208

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 9

M1 - 5983393

ER -

Differential body-factor technique for characterization of interface traps in MOSFETs

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Keywords

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