Digital etching of AlGaN/GaN heterostructures with GaN cap using inductively coupled oxygen plasma process combined with wet chemical

Research output: Contribution to journal › Journal article › peer-review

Original language	Korean
Journal	Materials Science in Semiconductor Processing
State	Published - 2024.10.1

Cite this

@article{7deb37dd3c904828b281f15639c2297c,

title = "Digital etching of AlGaN/GaN heterostructures with GaN cap using inductively coupled oxygen plasma process combined with wet chemical",

author = "Chel-Jong Choi",

year = "2024",

month = oct,

day = "1",

language = "Korean",

journal = "Materials Science in Semiconductor Processing",

issn = "1369-8001",

}