Dimensional structural transition in CdTe/CdxZn1-xTe nanostructures

H. S. Lee; H. L. Park; T. W. Kim

doi:10.1063/1.1832749

Dimensional structural transition in CdTe/Cd_xZn_1-xTe nanostructures

H. S. Lee
, H. L. Park
, T. W. Kim^*

^*Corresponding author for this work

Department of Physics

Yonsei University
Hanyang University

Research output: Contribution to journal › Journal article › peer-review

22 Scopus citations

Abstract

CdTe nanostructures were grown on Cd_xZn_1-xTe buffer layers by using molecular-beam epitaxy and atomic-layer epitaxy. The atomic force microscopy image showed that uniform CdTe quantum dots were formed on ZnTe buffer layer. Photoluminescence measurements showed that the excitonic peak corresponding to the interband transitions from the ground electronic subband to the ground heavy-hole band in the CdTe/Cd_xZn _1-xTe nanostructure shifted to a higher energy with increasing Cd mole fraction. The activation energy of the electrons confined in the CdTe/ZnTe quantum dots was higher than those of electrons in CdTe/Cd_xZn _1-xTe nanostructures. These results can help improve understanding of the dimensional structural transition in CdTe/Cd_xZn _1-xTe nanostructures.

Original language	English
Pages (from-to)	5598-5600
Number of pages	3
Journal	Applied Physics Letters
Volume	85
Issue number	23
DOIs	https://doi.org/10.1063/1.1832749
State	Published - 2004.12.6

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title = "Dimensional structural transition in CdTe/CdxZn1-xTe nanostructures",

abstract = "CdTe nanostructures were grown on CdxZn1-xTe buffer layers by using molecular-beam epitaxy and atomic-layer epitaxy. The atomic force microscopy image showed that uniform CdTe quantum dots were formed on ZnTe buffer layer. Photoluminescence measurements showed that the excitonic peak corresponding to the interband transitions from the ground electronic subband to the ground heavy-hole band in the CdTe/CdxZn 1-xTe nanostructure shifted to a higher energy with increasing Cd mole fraction. The activation energy of the electrons confined in the CdTe/ZnTe quantum dots was higher than those of electrons in CdTe/CdxZn 1-xTe nanostructures. These results can help improve understanding of the dimensional structural transition in CdTe/CdxZn 1-xTe nanostructures.",

author = "Lee, \{H. S.\} and Park, \{H. L.\} and Kim, \{T. W.\}",

year = "2004",

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T1 - Dimensional structural transition in CdTe/CdxZn1-xTe nanostructures

AU - Lee, H. S.

AU - Park, H. L.

AU - Kim, T. W.

PY - 2004/12/6

Y1 - 2004/12/6

N2 - CdTe nanostructures were grown on CdxZn1-xTe buffer layers by using molecular-beam epitaxy and atomic-layer epitaxy. The atomic force microscopy image showed that uniform CdTe quantum dots were formed on ZnTe buffer layer. Photoluminescence measurements showed that the excitonic peak corresponding to the interband transitions from the ground electronic subband to the ground heavy-hole band in the CdTe/CdxZn 1-xTe nanostructure shifted to a higher energy with increasing Cd mole fraction. The activation energy of the electrons confined in the CdTe/ZnTe quantum dots was higher than those of electrons in CdTe/CdxZn 1-xTe nanostructures. These results can help improve understanding of the dimensional structural transition in CdTe/CdxZn 1-xTe nanostructures.

AB - CdTe nanostructures were grown on CdxZn1-xTe buffer layers by using molecular-beam epitaxy and atomic-layer epitaxy. The atomic force microscopy image showed that uniform CdTe quantum dots were formed on ZnTe buffer layer. Photoluminescence measurements showed that the excitonic peak corresponding to the interband transitions from the ground electronic subband to the ground heavy-hole band in the CdTe/CdxZn 1-xTe nanostructure shifted to a higher energy with increasing Cd mole fraction. The activation energy of the electrons confined in the CdTe/ZnTe quantum dots was higher than those of electrons in CdTe/CdxZn 1-xTe nanostructures. These results can help improve understanding of the dimensional structural transition in CdTe/CdxZn 1-xTe nanostructures.

UR - https://www.scopus.com/pages/publications/12844273793

U2 - 10.1063/1.1832749

DO - 10.1063/1.1832749

M3 - Journal article

AN - SCOPUS:12844273793

SN - 0003-6951

VL - 85

SP - 5598

EP - 5600

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 23

ER -

Dimensional structural transition in CdTe/Cd_xZn_1-xTe nanostructures

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