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Direct evidence of the step-edge buckling at the Au/Si (557 ) -1×2 surface

  • J. H. Han
  • , H. S. Kim
  • , H. N. Hwang
  • , B. Kim
  • , S. Chung
  • , J. W. Chung
  • , C. C. Hwang
  • Pohang University of Science and Technology
  • Pohang Accelerator Laboratory

Research output: Contribution to journalJournal articlepeer-review

Abstract

We have investigated atomic structure and electrical properties of the Au/Si (557) -1×2 surface by using scanning tunneling microscopy. We observe the doubled periodicity (×2) for the step-edge atoms even far away from defects at room temperature (RT), indicating no Peierls-type transition reported earlier. We further identify the Au atoms well resolved from Si atoms in the Au-Si-Au chain at RT, in good accord with the prevailing structural model. Our scanning tunneling spectroscopy data taken along the step-edge atoms unambiguously reveal that these step-edge Si atoms are metallic, and are buckled apparently with a charge transferred from down to up Si atoms. We find no significant thermal fluctuation of the buckled step edges at RT.

Original languageEnglish
Article number241401
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume80
Issue number24
DOIs
StatePublished - 2009.12.2

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