Direct observation of hole current in amorphous oxide semiconductors under illumination

Yoon Jang Chung; Jeong Hwan Kim; Un Ki Kim; Deok Yong Cho; Hyung Suk Jung; Jae Kyeong Jeong; Cheol Seong Hwang

doi:10.1149/1.3567027

Direct observation of hole current in amorphous oxide semiconductors under illumination

Yoon Jang Chung
, Jeong Hwan Kim
, Un Ki Kim
, Deok Yong Cho
, Hyung Suk Jung
, Jae Kyeong Jeong
, Cheol Seong Hwang

Department of Physics

Seoul National University
Inha University

Research output: Contribution to journal › Journal article › peer-review

16 Scopus citations

Abstract

Hole current was directly observed in oxide semiconductors under illumination. Two stacks were fabricated, with In-Ga-Zn-O (IGZO) as the channel and SiO₂ or SiN_x as the gate insulator. X-ray photoelectron spectroscopy confirmed the IGZOSiN_x interface has no hole barrier while the IGZOSiO₂ interface has a significant one. This was used to analyze hole generation in IGZO by illuminating light at various wavelengths. As a result, a threshold wavelength, where holes start to emerge in the channel, was found to exist. Negative bias-illumination-temperature stress experiments showed that no additional threshold voltage shift exists at wavelengths longer than this threshold wavelength.

Original language	English
Pages (from-to)	G35-G37
Journal	Electrochemical and Solid-State Letters
Volume	14
Issue number	6
DOIs	https://doi.org/10.1149/1.3567027
State	Published - 2011

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@article{a9b3828aeebe4198b8e526f79b80d22f,

title = "Direct observation of hole current in amorphous oxide semiconductors under illumination",

abstract = "Hole current was directly observed in oxide semiconductors under illumination. Two stacks were fabricated, with In-Ga-Zn-O (IGZO) as the channel and SiO2 or SiNx as the gate insulator. X-ray photoelectron spectroscopy confirmed the IGZOSiNx interface has no hole barrier while the IGZOSiO2 interface has a significant one. This was used to analyze hole generation in IGZO by illuminating light at various wavelengths. As a result, a threshold wavelength, where holes start to emerge in the channel, was found to exist. Negative bias-illumination-temperature stress experiments showed that no additional threshold voltage shift exists at wavelengths longer than this threshold wavelength.",

author = "Chung, \{Yoon Jang\} and Kim, \{Jeong Hwan\} and Kim, \{Un Ki\} and Cho, \{Deok Yong\} and Jung, \{Hyung Suk\} and Jeong, \{Jae Kyeong\} and Hwang, \{Cheol Seong\}",

year = "2011",

doi = "10.1149/1.3567027",

language = "English",

volume = "14",

pages = "G35--G37",

journal = "Electrochemical and Solid-State Letters",

issn = "1099-0062",

number = "6",

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TY - JOUR

T1 - Direct observation of hole current in amorphous oxide semiconductors under illumination

AU - Chung, Yoon Jang

AU - Kim, Jeong Hwan

AU - Kim, Un Ki

AU - Cho, Deok Yong

AU - Jung, Hyung Suk

AU - Jeong, Jae Kyeong

AU - Hwang, Cheol Seong

PY - 2011

Y1 - 2011

N2 - Hole current was directly observed in oxide semiconductors under illumination. Two stacks were fabricated, with In-Ga-Zn-O (IGZO) as the channel and SiO2 or SiNx as the gate insulator. X-ray photoelectron spectroscopy confirmed the IGZOSiNx interface has no hole barrier while the IGZOSiO2 interface has a significant one. This was used to analyze hole generation in IGZO by illuminating light at various wavelengths. As a result, a threshold wavelength, where holes start to emerge in the channel, was found to exist. Negative bias-illumination-temperature stress experiments showed that no additional threshold voltage shift exists at wavelengths longer than this threshold wavelength.

AB - Hole current was directly observed in oxide semiconductors under illumination. Two stacks were fabricated, with In-Ga-Zn-O (IGZO) as the channel and SiO2 or SiNx as the gate insulator. X-ray photoelectron spectroscopy confirmed the IGZOSiNx interface has no hole barrier while the IGZOSiO2 interface has a significant one. This was used to analyze hole generation in IGZO by illuminating light at various wavelengths. As a result, a threshold wavelength, where holes start to emerge in the channel, was found to exist. Negative bias-illumination-temperature stress experiments showed that no additional threshold voltage shift exists at wavelengths longer than this threshold wavelength.

UR - https://www.scopus.com/pages/publications/79953787561

U2 - 10.1149/1.3567027

DO - 10.1149/1.3567027

M3 - Journal article

AN - SCOPUS:79953787561

SN - 1099-0062

VL - 14

SP - G35-G37

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 6

ER -

Direct observation of hole current in amorphous oxide semiconductors under illumination

Abstract

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