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Dramatically enhanced ambient effects in a multi-layer MoS2 transistor with channel thickness near maximum depletion width

  • Chang Seon Park
  • , Changwoo Lee
  • , Won Jun Jung
  • , Min Park
  • , Dong Su Lee
  • , Hong Seok Lee
  • , Dae Young Jeon*
  • *Corresponding author for this work
  • Korea Institute of Science and Technology
  • Jeonbuk National University

Research output: Contribution to journalJournal articlepeer-review

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