Dramatically enhanced ambient effects in a multi-layer MoS2 transistor with channel thickness near maximum depletion width
- Chang Seon Park
- , Changwoo Lee
- , Won Jun Jung
- , Min Park
- , Dong Su Lee
- , Hong Seok Lee
- , Dae Young Jeon*
*Corresponding author for this work
- Korea Institute of Science and Technology
- Jeonbuk National University
Research output: Contribution to journal › Journal article › peer-review
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