Dry etching of SrBi2 Ta2 O9 thin films in Cl2/NF3/O2/Ar inductively coupled plasmas

Y. H. Im; J. S. Park; C. S. Choi; R. J. Choi; Y. B. Hahn; S. H. Lee; J. K. Lee

doi:10.1116/1.1351800

Dry etching of SrBi₂ Ta₂ O₉ thin films in Cl₂/NF₃/O₂/Ar inductively coupled plasmas

Y. H. Im
, J. S. Park
, C. S. Choi
, R. J. Choi
, Y. B. Hahn^*
, S. H. Lee
, J. K. Lee

^*Corresponding author for this work

Division of Chemical Engineering

Jeonbuk National University
Korea Institute of Science and Technology

Research output: Contribution to journal › Journal article › peer-review

19 Scopus citations

Abstract

A study of high-density plasma etching of SrBi₂Ta₂O₉ (SBT) thin fims was performed in a planar type inductively coupled plasma (ICP) etcher. The influence of plasma chemistries and plasma parameters were analyzed in terms of the etch rate, surface morphology, crystal structure and the polarization-electric field (P-E) loops. It was shown that the SBT films etched with Cl₂/NF₃/O₂/Ar show good P-E curves with respect to the samples etched with Cl₂/Ar and Cl₂/NF₃/Ar discharges.

Original language	English
Pages (from-to)	1315-1319
Number of pages	5
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	19
Issue number	4
DOIs	https://doi.org/10.1116/1.1351800
State	Published - 2001.07

Quacquarelli Symonds(QS) Subject Topics

Materials Science
Physics & Astronomy

Access to Document

10.1116/1.1351800

Cite this

@article{9fde87311b9c4f3db099a977dc5c9777,

title = "Dry etching of SrBi2 Ta2 O9 thin films in Cl2/NF3/O2/Ar inductively coupled plasmas",

abstract = "A study of high-density plasma etching of SrBi2Ta2O9 (SBT) thin fims was performed in a planar type inductively coupled plasma (ICP) etcher. The influence of plasma chemistries and plasma parameters were analyzed in terms of the etch rate, surface morphology, crystal structure and the polarization-electric field (P-E) loops. It was shown that the SBT films etched with Cl2/NF3/O2/Ar show good P-E curves with respect to the samples etched with Cl2/Ar and Cl2/NF3/Ar discharges.",

author = "Im, \{Y. H.\} and Park, \{J. S.\} and Choi, \{C. S.\} and Choi, \{R. J.\} and Hahn, \{Y. B.\} and Lee, \{S. H.\} and Lee, \{J. K.\}",

year = "2001",

month = jul,

doi = "10.1116/1.1351800",

language = "English",

volume = "19",

pages = "1315--1319",

journal = "Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films",

issn = "0734-2101",

number = "4",

}

TY - JOUR

T1 - Dry etching of SrBi2 Ta2 O9 thin films in Cl2/NF3/O2/Ar inductively coupled plasmas

AU - Im, Y. H.

AU - Park, J. S.

AU - Choi, C. S.

AU - Choi, R. J.

AU - Hahn, Y. B.

AU - Lee, S. H.

AU - Lee, J. K.

PY - 2001/7

Y1 - 2001/7

N2 - A study of high-density plasma etching of SrBi2Ta2O9 (SBT) thin fims was performed in a planar type inductively coupled plasma (ICP) etcher. The influence of plasma chemistries and plasma parameters were analyzed in terms of the etch rate, surface morphology, crystal structure and the polarization-electric field (P-E) loops. It was shown that the SBT films etched with Cl2/NF3/O2/Ar show good P-E curves with respect to the samples etched with Cl2/Ar and Cl2/NF3/Ar discharges.

AB - A study of high-density plasma etching of SrBi2Ta2O9 (SBT) thin fims was performed in a planar type inductively coupled plasma (ICP) etcher. The influence of plasma chemistries and plasma parameters were analyzed in terms of the etch rate, surface morphology, crystal structure and the polarization-electric field (P-E) loops. It was shown that the SBT films etched with Cl2/NF3/O2/Ar show good P-E curves with respect to the samples etched with Cl2/Ar and Cl2/NF3/Ar discharges.

UR - https://www.scopus.com/pages/publications/0035393039

U2 - 10.1116/1.1351800

DO - 10.1116/1.1351800

M3 - Journal article

AN - SCOPUS:0035393039

SN - 0734-2101

VL - 19

SP - 1315

EP - 1319

JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

IS - 4

ER -

Dry etching of SrBi₂ Ta₂ O₉ thin films in Cl₂/NF₃/O₂/Ar inductively coupled plasmas

Abstract

Quacquarelli Symonds(QS) Subject Topics

Access to Document

Other files and links

Fingerprint

Cite this