Dual-band negative group delay circuit using defected microstrip structure

  • Girdhari Chaudhary
  • , Phirun Kim
  • , Junhyung Jeong
  • , Yongchae Jeong
  • , Jongsik Lim

Research output: Contribution to conferenceConference paperpeer-review

Abstract

This paper demonstrates a design and analysis of a dual-band negative group delay (NGD) network using defected microstrip structure (DMS). The group delays (GD) and signal attenuation (SA) of each band can be controlled independently by resistors connected across U-shaped DMS slots. For the experimental validation, the NGD network is designed and fabricated. For enhancement of the NGD bandwidth, two-stage NGD networks with slightly different center frequencies are connected in cascade. From the measurement, the GDs of -3.86±0.94 ns and -3.26±1.07 ns are obtained at 3.32-3.44 GHz and 4.63-4.76 GHz, respectively.

Original languageEnglish
Title of host publicationRWS 2015 - Proceedings
Subtitle of host publication2015 IEEE Radio and Wireless Symposium, RWW 2015
PublisherIEEE Computer Society
Pages129-131
Number of pages3
EditionJune
ISBN (Electronic)9781479955053
DOIs
StatePublished - 2015.06.19
Event2015 IEEE Radio and Wireless Symposium, RWS 2015 - RWW 2015 - San Diego, United States
Duration: 2015.01.252015.01.28

Publication series

NameIEEE Radio and Wireless Symposium, RWS
NumberJune
Volume2015-June
ISSN (Print)2164-2958
ISSN (Electronic)2164-2974

Conference

Conference2015 IEEE Radio and Wireless Symposium, RWS 2015 - RWW 2015
Country/TerritoryUnited States
CitySan Diego
Period15.01.2515.01.28

Keywords

  • Defected microstrip structure
  • distributed transmission line
  • dual-band
  • negative group delay

Quacquarelli Symonds(QS) Subject Topics

  • Computer Science & Information Systems
  • Engineering - Electrical & Electronic
  • Communication & Media Studies
  • Engineering - Petroleum
  • Data Science

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