Abstract
Electromagnetic pulses (EMPs) generated by nuclear explosions can induce latch-up and burnout in semiconductor circuits through mechanisms similar to those caused by prompt gamma rays. Conventional nuclear event detectors (NEDs) mitigate radiation-induced latch-up by temporarily cutting power; however, they cannot respond to nanosecond-scale EMP transients. This article presents a dual-sensor-based active protector (DAP) that extends the NED concept by adding an EMP detection channel while maintaining the same transient power-cutoff mechanism. The integrated DAP consists of an EMP sensor, a prompt gamma-ray sensor, and a shared high-speed signal-processing circuit that evaluates both sensor outputs in real time and generates a cutoff-control pulse when the predefined threshold is exceeded. The gamma-ray channel was verified to exhibit a dose-rate response consistent with that of the original NED design. In EMP detection experiments, the DAP generated stable cutoff-control signals within approximately 50 ns. System-level tests demonstrated that the DAP effectively protected an integrated circuit from EMP-induced malfunction by temporarily interrupting the power supply.
| Original language | English |
|---|---|
| Pages (from-to) | 1335-1343 |
| Number of pages | 9 |
| Journal | IEEE Transactions on Nuclear Science |
| Volume | 73 |
| Issue number | 4 |
| DOIs | |
| State | Published - 2026.04.1 |
Keywords
- Active electromagnetic pulse (EMP) protector
- nuclear EMP
- prompt gamma-ray detection
- radiation-hardened circuit
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