Dual-sweep combinational transconductance technique for separate extraction of parasitic resistances in amorphous thin-film transistors

Sungwoo Jun; Hagyoul Bae; Hyeongjung Kim; Jungmin Lee; Sung Jin Choi; Dae Hwan Kim; Dong Myong Kim

doi:10.1109/LED.2014.2384504

Dual-sweep combinational transconductance technique for separate extraction of parasitic resistances in amorphous thin-film transistors

Sungwoo Jun
, Hagyoul Bae
, Hyeongjung Kim
, Jungmin Lee
, Sung Jin Choi
, Dae Hwan Kim
, Dong Myong Kim

Division of Electronic Engineering

Kookmin University

Research output: Contribution to journal › Journal article › peer-review

23 Scopus citations

Abstract

We report a dual-sweep combinational transconductance technique for separate extraction of parasitic source (R_S) and drain (R_D) resistances in thin-film transistors (TFTs) by combining forward and reverse transfer characteristics. In the proposed technique, gate bias-dependent total resistance [R_TOT (V_GS] and degradation of the transcond- uctance due to the parasitic resistance at the source terminal during the dual-sweep characterization are employed. Applying the proposed technique to amorphous oxide semiconductor TFTs with various combinations of channel length (L) and width (W), we successfully separated R_S and R_D. A model for the W - and L-dependences of the extracted parasitic resistances is also provided.

Original language	English
Article number	7001587
Pages (from-to)	144-146
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	36
Issue number	2
DOIs	https://doi.org/10.1109/LED.2014.2384504
State	Published - 2015.02.1

Keywords

Drain resistance
Dual-sweep
Parasitic resistance
Source resistance
TFT
Thin film transistors

Access to Document

10.1109/LED.2014.2384504

Cite this

@article{d50beeaeb8a9480aaeb35183e7bf68d2,

title = "Dual-sweep combinational transconductance technique for separate extraction of parasitic resistances in amorphous thin-film transistors",

abstract = "We report a dual-sweep combinational transconductance technique for separate extraction of parasitic source (RS) and drain (RD) resistances in thin-film transistors (TFTs) by combining forward and reverse transfer characteristics. In the proposed technique, gate bias-dependent total resistance [RTOT (VGS] and degradation of the transcond- uctance due to the parasitic resistance at the source terminal during the dual-sweep characterization are employed. Applying the proposed technique to amorphous oxide semiconductor TFTs with various combinations of channel length (L) and width (W), we successfully separated RS and RD. A model for the W - and L-dependences of the extracted parasitic resistances is also provided.",

keywords = "Drain resistance, Dual-sweep, Parasitic resistance, Source resistance, TFT, Thin film transistors",

author = "Sungwoo Jun and Hagyoul Bae and Hyeongjung Kim and Jungmin Lee and Choi, \{Sung Jin\} and Kim, \{Dae Hwan\} and Kim, \{Dong Myong\}",

note = "Publisher Copyright: {\textcopyright} 2014 IEEE.",

year = "2015",

month = feb,

day = "1",

doi = "10.1109/LED.2014.2384504",

language = "English",

volume = "36",

pages = "144--146",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

number = "2",

}

TY - JOUR

T1 - Dual-sweep combinational transconductance technique for separate extraction of parasitic resistances in amorphous thin-film transistors

AU - Jun, Sungwoo

AU - Bae, Hagyoul

AU - Kim, Hyeongjung

AU - Lee, Jungmin

AU - Choi, Sung Jin

AU - Kim, Dae Hwan

AU - Kim, Dong Myong

PY - 2015/2/1

Y1 - 2015/2/1

N2 - We report a dual-sweep combinational transconductance technique for separate extraction of parasitic source (RS) and drain (RD) resistances in thin-film transistors (TFTs) by combining forward and reverse transfer characteristics. In the proposed technique, gate bias-dependent total resistance [RTOT (VGS] and degradation of the transcond- uctance due to the parasitic resistance at the source terminal during the dual-sweep characterization are employed. Applying the proposed technique to amorphous oxide semiconductor TFTs with various combinations of channel length (L) and width (W), we successfully separated RS and RD. A model for the W - and L-dependences of the extracted parasitic resistances is also provided.

AB - We report a dual-sweep combinational transconductance technique for separate extraction of parasitic source (RS) and drain (RD) resistances in thin-film transistors (TFTs) by combining forward and reverse transfer characteristics. In the proposed technique, gate bias-dependent total resistance [RTOT (VGS] and degradation of the transcond- uctance due to the parasitic resistance at the source terminal during the dual-sweep characterization are employed. Applying the proposed technique to amorphous oxide semiconductor TFTs with various combinations of channel length (L) and width (W), we successfully separated RS and RD. A model for the W - and L-dependences of the extracted parasitic resistances is also provided.

KW - Drain resistance

KW - Dual-sweep

KW - Parasitic resistance

KW - Source resistance

KW - TFT

KW - Thin film transistors

UR - https://www.scopus.com/pages/publications/84921871463

U2 - 10.1109/LED.2014.2384504

DO - 10.1109/LED.2014.2384504

M3 - Journal article

AN - SCOPUS:84921871463

SN - 0741-3106

VL - 36

SP - 144

EP - 146

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 2

M1 - 7001587

ER -

Dual-sweep combinational transconductance technique for separate extraction of parasitic resistances in amorphous thin-film transistors

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this