Dysprosium oxide (Dy2O3) layer effect on the interface possessions of Au/ n-GaN Schottky diode as an interlayer and its chemical and microstructural features

Chel-Jong Choi

Dysprosium oxide (Dy2O3) layer effect on the interface possessions of Au/ n-GaN Schottky diode as an interlayer and its chemical and microstructural features

Chel-Jong Choi

Department of Semiconductor Science and Technology

Research output: Contribution to journal › Journal article › peer-review

Original language	Korean
Journal	Materials Science in Semiconductor Processing
State	Published - 2024.04.1

Cite this

@article{660a54fe6edc4786b652b2f545811e60,

title = "Dysprosium oxide (Dy2O3) layer effect on the interface possessions of Au/ n-GaN Schottky diode as an interlayer and its chemical and microstructural features",

author = "Chel-Jong Choi",

year = "2024",

month = apr,

day = "1",

language = "Korean",

journal = "Materials Science in Semiconductor Processing",

issn = "1369-8001",

}