EBIC and CL studies of ELOG GaN films

E. B. Yakimov; P. S. Vergeles; A. V. Govorkov; A. Y. Polyakov; N. B. Smirnov; In Hwan Lee; Cheul Ro Lee; S. J. Pearton

doi:10.1016/j.spmi.2008.09.008

EBIC and CL studies of ELOG GaN films

E. B. Yakimov^*
, P. S. Vergeles
, A. V. Govorkov
, A. Y. Polyakov
, N. B. Smirnov
, In Hwan Lee
, Cheul Ro Lee
, S. J. Pearton

^*Corresponding author for this work

Information Materials Engineering

Russian Academy of Sciences
Institute of Rare Metals
Engineering College
University of Florida

Research output: Contribution to journal › Journal article › peer-review

13 Scopus citations

Abstract

Results demonstrating the ability of EBIC and CL methods for ELOG GaN films characterization are presented. It is shown that EBIC measurements allow us to estimate not only the lateral distribution of diffusion length but also the donor distribution in such films. Donor concentration is found to be different in slit and wing regions. A difference in CL and EBIC images is revealed, which is explained by band bending near the boundaries where two overgrowing fronts meet.

Original language	English
Pages (from-to)	308-313
Number of pages	6
Journal	Superlattices and Microstructures
Volume	45
Issue number	4-5
DOIs	https://doi.org/10.1016/j.spmi.2008.09.008
State	Published - 2009.04

Keywords

Cathodoluminescence
Diffusion length
Dislocation
EBIC
ELOG GaN

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10.1016/j.spmi.2008.09.008

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@article{c4e7073fb0fd4440ba9c44ac28c592ec,

title = "EBIC and CL studies of ELOG GaN films",

abstract = "Results demonstrating the ability of EBIC and CL methods for ELOG GaN films characterization are presented. It is shown that EBIC measurements allow us to estimate not only the lateral distribution of diffusion length but also the donor distribution in such films. Donor concentration is found to be different in slit and wing regions. A difference in CL and EBIC images is revealed, which is explained by band bending near the boundaries where two overgrowing fronts meet.",

keywords = "Cathodoluminescence, Diffusion length, Dislocation, EBIC, ELOG GaN",

author = "Yakimov, \{E. B.\} and Vergeles, \{P. S.\} and Govorkov, \{A. V.\} and Polyakov, \{A. Y.\} and Smirnov, \{N. B.\} and Lee, \{In Hwan\} and \{Ro Lee\}, Cheul and Pearton, \{S. J.\}",

year = "2009",

month = apr,

doi = "10.1016/j.spmi.2008.09.008",

language = "English",

volume = "45",

pages = "308--313",

journal = "Superlattices and Microstructures",

issn = "0749-6036",

number = "4-5",

}

TY - JOUR

T1 - EBIC and CL studies of ELOG GaN films

AU - Yakimov, E. B.

AU - Vergeles, P. S.

AU - Govorkov, A. V.

AU - Polyakov, A. Y.

AU - Smirnov, N. B.

AU - Lee, In Hwan

AU - Ro Lee, Cheul

AU - Pearton, S. J.

PY - 2009/4

Y1 - 2009/4

N2 - Results demonstrating the ability of EBIC and CL methods for ELOG GaN films characterization are presented. It is shown that EBIC measurements allow us to estimate not only the lateral distribution of diffusion length but also the donor distribution in such films. Donor concentration is found to be different in slit and wing regions. A difference in CL and EBIC images is revealed, which is explained by band bending near the boundaries where two overgrowing fronts meet.

AB - Results demonstrating the ability of EBIC and CL methods for ELOG GaN films characterization are presented. It is shown that EBIC measurements allow us to estimate not only the lateral distribution of diffusion length but also the donor distribution in such films. Donor concentration is found to be different in slit and wing regions. A difference in CL and EBIC images is revealed, which is explained by band bending near the boundaries where two overgrowing fronts meet.

KW - Cathodoluminescence

KW - Diffusion length

KW - Dislocation

KW - EBIC

KW - ELOG GaN

UR - https://www.scopus.com/pages/publications/63149185320

U2 - 10.1016/j.spmi.2008.09.008

DO - 10.1016/j.spmi.2008.09.008

M3 - Journal article

AN - SCOPUS:63149185320

SN - 0749-6036

VL - 45

SP - 308

EP - 313

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

IS - 4-5

ER -

EBIC and CL studies of ELOG GaN films

Abstract

Keywords

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