Effect of a p-type ZnO insertion layer on the external quantum efficiency of GaInN light-emitting diodes

Guan Bo Lin; Bhishma Pandit; Yongjo Park; Jong Kyu Kim; Yung Ryel Ryu; E. Fred Schubert; Jaehee Cho

doi:10.7567/APEX.8.092102

Effect of a p-type ZnO insertion layer on the external quantum efficiency of GaInN light-emitting diodes

Guan Bo Lin
, Bhishma Pandit
, Yongjo Park
, Jong Kyu Kim
, Yung Ryel Ryu
, E. Fred Schubert
, Jaehee Cho^*

^*Corresponding author for this work

Department of Semiconductor Science and Technology

Research output: Contribution to journal › Journal article › peer-review

4 Scopus citations

Abstract

The external quantum efficiency (EQE) of a GaInN green light-emitting diode (LED) is improved by inserting a p-type ZnO layer between the indium tin oxide electrode and the p-type GaN layer. Several hypotheses are discussed to explain the EQE improvement in the LED with the ZnO layer. It is concluded that higher hole injection efficiency and better electron confinement explain the EQE improvement, which is supported by the results of device simulations showing that the EQE is sensitive to the polarization sheet charge density at the interface between the last quantum barrier and electron-blocking layer.

Original language	English
Article number	092102
Journal	Applied Physics Express
Volume	8
Issue number	9
DOIs	https://doi.org/10.7567/APEX.8.092102
State	Published - 2015.09.1

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Quacquarelli Symonds(QS) Subject Topics

Physics & Astronomy

Access to Document

10.7567/APEX.8.092102

Cite this

@article{9d0372e786914232a538ded4d940f02c,

title = "Effect of a p-type ZnO insertion layer on the external quantum efficiency of GaInN light-emitting diodes",

abstract = "The external quantum efficiency (EQE) of a GaInN green light-emitting diode (LED) is improved by inserting a p-type ZnO layer between the indium tin oxide electrode and the p-type GaN layer. Several hypotheses are discussed to explain the EQE improvement in the LED with the ZnO layer. It is concluded that higher hole injection efficiency and better electron confinement explain the EQE improvement, which is supported by the results of device simulations showing that the EQE is sensitive to the polarization sheet charge density at the interface between the last quantum barrier and electron-blocking layer.",

author = "Lin, \{Guan Bo\} and Bhishma Pandit and Yongjo Park and Kim, \{Jong Kyu\} and Ryu, \{Yung Ryel\} and Schubert, \{E. Fred\} and Jaehee Cho",

note = "Publisher Copyright: {\textcopyright} 2015 The Japan Society of Applied Physics.",

year = "2015",

month = sep,

day = "1",

doi = "10.7567/APEX.8.092102",

language = "English",

volume = "8",

journal = "Applied Physics Express",

issn = "1882-0778",

number = "9",

}

TY - JOUR

T1 - Effect of a p-type ZnO insertion layer on the external quantum efficiency of GaInN light-emitting diodes

AU - Lin, Guan Bo

AU - Pandit, Bhishma

AU - Park, Yongjo

AU - Kim, Jong Kyu

AU - Ryu, Yung Ryel

AU - Schubert, E. Fred

AU - Cho, Jaehee

PY - 2015/9/1

Y1 - 2015/9/1

N2 - The external quantum efficiency (EQE) of a GaInN green light-emitting diode (LED) is improved by inserting a p-type ZnO layer between the indium tin oxide electrode and the p-type GaN layer. Several hypotheses are discussed to explain the EQE improvement in the LED with the ZnO layer. It is concluded that higher hole injection efficiency and better electron confinement explain the EQE improvement, which is supported by the results of device simulations showing that the EQE is sensitive to the polarization sheet charge density at the interface between the last quantum barrier and electron-blocking layer.

AB - The external quantum efficiency (EQE) of a GaInN green light-emitting diode (LED) is improved by inserting a p-type ZnO layer between the indium tin oxide electrode and the p-type GaN layer. Several hypotheses are discussed to explain the EQE improvement in the LED with the ZnO layer. It is concluded that higher hole injection efficiency and better electron confinement explain the EQE improvement, which is supported by the results of device simulations showing that the EQE is sensitive to the polarization sheet charge density at the interface between the last quantum barrier and electron-blocking layer.

UR - https://www.scopus.com/pages/publications/84941013631

U2 - 10.7567/APEX.8.092102

DO - 10.7567/APEX.8.092102

M3 - Journal article

AN - SCOPUS:84941013631

SN - 1882-0778

VL - 8

JO - Applied Physics Express

JF - Applied Physics Express

IS - 9

M1 - 092102

ER -

Effect of a p-type ZnO insertion layer on the external quantum efficiency of GaInN light-emitting diodes

Abstract

UN SDGs

Quacquarelli Symonds(QS) Subject Topics

Access to Document

Other files and links

Fingerprint

Cite this