Effect of Ag Nanoparticles on resistive switching of polyfluorene-based organic non-volatile memory devices

Tae Wook Kim; Seung Hwan Oh; Hyejung Choi; Gunuk Wang; Dong Yu Kim; Hyunsang Hwang; Takhee Lee

doi:10.3938/jkps.56.128

Effect of Ag Nanoparticles on resistive switching of polyfluorene-based organic non-volatile memory devices

Tae Wook Kim^*
, Seung Hwan Oh
, Hyejung Choi
, Gunuk Wang
, Dong Yu Kim
, Hyunsang Hwang
, Takhee Lee

^*Corresponding author for this work

Department of Flexible and Printable Electronics

Gwangju Institute of Science and Technology
University of Washington

Research output: Contribution to journal › Journal article › peer-review

2 Scopus citations

Abstract

The effects of Ag nanoparticles on the switching behavior of polyfluorene-based organic nonvolatile memory devices were investigated. Polyfluorene-derivatives (WPF-oxy-F) with and without Ag nanoparticles were synthesized, and the presence of Ag nanoparticles in Ag-WPF-oxy-F was identified by transmission electron microscopy and X-ray photoelectron spectroscopy analyses. The Ag-nanoparticles did not significantly affect the basic switching performances, such as the currentvoltage characteristics, the distribution of on/off resistance, and the retention. The pulse switching time of Ag-WPF-oxy-F was faster than that of WPF-oxy-F. Ag-WPF-oxy-F memory devices showed an area dependence in the high resistance state, implying that formation of a Ag metallic channel for current conduction.

Original language	English
Pages (from-to)	128-132
Number of pages	5
Journal	Journal of the Korean Physical Society
Volume	56
Issue number	1
DOIs	https://doi.org/10.3938/jkps.56.128
State	Published - 2010.01.15

Keywords

Ag nanoparticles
Organic non-volatile memory device
Polyfluorene-derivatives

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10.3938/jkps.56.128

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@article{53f2e39e4ab94c57a67354df27b71261,

title = "Effect of Ag Nanoparticles on resistive switching of polyfluorene-based organic non-volatile memory devices",

abstract = "The effects of Ag nanoparticles on the switching behavior of polyfluorene-based organic nonvolatile memory devices were investigated. Polyfluorene-derivatives (WPF-oxy-F) with and without Ag nanoparticles were synthesized, and the presence of Ag nanoparticles in Ag-WPF-oxy-F was identified by transmission electron microscopy and X-ray photoelectron spectroscopy analyses. The Ag-nanoparticles did not significantly affect the basic switching performances, such as the currentvoltage characteristics, the distribution of on/off resistance, and the retention. The pulse switching time of Ag-WPF-oxy-F was faster than that of WPF-oxy-F. Ag-WPF-oxy-F memory devices showed an area dependence in the high resistance state, implying that formation of a Ag metallic channel for current conduction.",

keywords = "Ag nanoparticles, Organic non-volatile memory device, Polyfluorene-derivatives",

author = "Kim, \{Tae Wook\} and Oh, \{Seung Hwan\} and Hyejung Choi and Gunuk Wang and Kim, \{Dong Yu\} and Hyunsang Hwang and Takhee Lee",

year = "2010",

month = jan,

day = "15",

doi = "10.3938/jkps.56.128",

language = "English",

volume = "56",

pages = "128--132",

journal = "Journal of the Korean Physical Society",

issn = "0374-4884",

number = "1",

}

TY - JOUR

T1 - Effect of Ag Nanoparticles on resistive switching of polyfluorene-based organic non-volatile memory devices

AU - Kim, Tae Wook

AU - Oh, Seung Hwan

AU - Choi, Hyejung

AU - Wang, Gunuk

AU - Kim, Dong Yu

AU - Hwang, Hyunsang

AU - Lee, Takhee

PY - 2010/1/15

Y1 - 2010/1/15

N2 - The effects of Ag nanoparticles on the switching behavior of polyfluorene-based organic nonvolatile memory devices were investigated. Polyfluorene-derivatives (WPF-oxy-F) with and without Ag nanoparticles were synthesized, and the presence of Ag nanoparticles in Ag-WPF-oxy-F was identified by transmission electron microscopy and X-ray photoelectron spectroscopy analyses. The Ag-nanoparticles did not significantly affect the basic switching performances, such as the currentvoltage characteristics, the distribution of on/off resistance, and the retention. The pulse switching time of Ag-WPF-oxy-F was faster than that of WPF-oxy-F. Ag-WPF-oxy-F memory devices showed an area dependence in the high resistance state, implying that formation of a Ag metallic channel for current conduction.

AB - The effects of Ag nanoparticles on the switching behavior of polyfluorene-based organic nonvolatile memory devices were investigated. Polyfluorene-derivatives (WPF-oxy-F) with and without Ag nanoparticles were synthesized, and the presence of Ag nanoparticles in Ag-WPF-oxy-F was identified by transmission electron microscopy and X-ray photoelectron spectroscopy analyses. The Ag-nanoparticles did not significantly affect the basic switching performances, such as the currentvoltage characteristics, the distribution of on/off resistance, and the retention. The pulse switching time of Ag-WPF-oxy-F was faster than that of WPF-oxy-F. Ag-WPF-oxy-F memory devices showed an area dependence in the high resistance state, implying that formation of a Ag metallic channel for current conduction.

KW - Ag nanoparticles

KW - Organic non-volatile memory device

KW - Polyfluorene-derivatives

UR - https://www.scopus.com/pages/publications/77954843800

U2 - 10.3938/jkps.56.128

DO - 10.3938/jkps.56.128

M3 - Journal article

AN - SCOPUS:77954843800

SN - 0374-4884

VL - 56

SP - 128

EP - 132

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - 1

ER -

Effect of Ag Nanoparticles on resistive switching of polyfluorene-based organic non-volatile memory devices

Abstract

Keywords

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