Effect of Annealing Ambient on Structural and Electrical Propertiesof Ge Metal-Oxide-Semiconductor Capacitorswith Pt Gate Electrode and HfO2 Gate Dielectric

Chel-Jong Choi

Effect of Annealing Ambient on Structural and Electrical Propertiesof Ge Metal-Oxide-Semiconductor Capacitorswith Pt Gate Electrode and HfO2 Gate Dielectric

Chel-Jong Choi

Department of Semiconductor Science and Technology

Research output: Contribution to journal › Journal article › peer-review

Original language	Korean
Journal	Materials Transactions
State	Published - 2011.01.1

Cite this

@article{613d890068d6445591d062f4704beeca,

title = "Effect of Annealing Ambient on Structural and Electrical Propertiesof Ge Metal-Oxide-Semiconductor Capacitorswith Pt Gate Electrode and HfO2 Gate Dielectric",

author = "Chel-Jong Choi",

year = "2011",

month = jan,

day = "1",

language = "Korean",

journal = "Materials Transactions",

issn = "1345-9678",

}