Effect of base structure on the device characteristics of SiGe HBTs fabricated by reduced-pressure chemical vapor deposition

Dongwoo Suh; Bongki Mheen; Sang Hoon Kim; Hong Seung Kim; Seung Yun Lee; Chan Woo Park; Sang Heung Lee; Kyu Hwan Shim; Jin Yeong Kang

Effect of base structure on the device characteristics of SiGe HBTs fabricated by reduced-pressure chemical vapor deposition

Dongwoo Suh^*
, Bongki Mheen
, Sang Hoon Kim
, Hong Seung Kim
, Seung Yun Lee
, Chan Woo Park
, Sang Heung Lee
, Kyu Hwan Shim
, Jin Yeong Kang

^*Corresponding author for this work

Department of Semiconductor Science and Technology

Electronics and Telecommunications Research Institute

Research output: Contribution to journal › Journal article › peer-review

3 Scopus citations

Abstract

The effects of the base thickness and the Ge profile on the DC, the small-signal, and the noise characteristics of SiGe heterostructure bipolar transistors (HBTs) fabricated using reduced-pressure chemical vapor deposition (RPCVD) were investigated. A thin triangular Ge profile was noted as being very effective in enhancing the cutoff frequency (f_T) while a thick base profile was good for both maximum oscillation frequency (f_max) and noise performance. For the noise characteristics, a thin base was inferior to a thick base. The importance of base optimization in high frequency applications of SiGe HBTs is discussed on the basis of the analyzed DC, small-signal, and noise characteristics.

Original language	English
Pages (from-to)	285-287
Number of pages	3
Journal	Journal of the Korean Physical Society
Volume	42
Issue number	2
State	Published - 2003.02

Keywords

DC
HBT
Noise
RF
RPCVD
SiGe

Cite this

@article{98f36b75c2b248cc9e5c3c6cd67a1cfb,

title = "Effect of base structure on the device characteristics of SiGe HBTs fabricated by reduced-pressure chemical vapor deposition",

abstract = "The effects of the base thickness and the Ge profile on the DC, the small-signal, and the noise characteristics of SiGe heterostructure bipolar transistors (HBTs) fabricated using reduced-pressure chemical vapor deposition (RPCVD) were investigated. A thin triangular Ge profile was noted as being very effective in enhancing the cutoff frequency (fT) while a thick base profile was good for both maximum oscillation frequency (fmax) and noise performance. For the noise characteristics, a thin base was inferior to a thick base. The importance of base optimization in high frequency applications of SiGe HBTs is discussed on the basis of the analyzed DC, small-signal, and noise characteristics.",

keywords = "DC, HBT, Noise, RF, RPCVD, SiGe",

author = "Dongwoo Suh and Bongki Mheen and Kim, \{Sang Hoon\} and Kim, \{Hong Seung\} and Lee, \{Seung Yun\} and Park, \{Chan Woo\} and Lee, \{Sang Heung\} and Shim, \{Kyu Hwan\} and Kang, \{Jin Yeong\}",

year = "2003",

month = feb,

language = "English",

volume = "42",

pages = "285--287",

journal = "Journal of the Korean Physical Society",

issn = "0374-4884",

number = "2",

}

TY - JOUR

T1 - Effect of base structure on the device characteristics of SiGe HBTs fabricated by reduced-pressure chemical vapor deposition

AU - Suh, Dongwoo

AU - Mheen, Bongki

AU - Kim, Sang Hoon

AU - Kim, Hong Seung

AU - Lee, Seung Yun

AU - Park, Chan Woo

AU - Lee, Sang Heung

AU - Shim, Kyu Hwan

AU - Kang, Jin Yeong

PY - 2003/2

Y1 - 2003/2

N2 - The effects of the base thickness and the Ge profile on the DC, the small-signal, and the noise characteristics of SiGe heterostructure bipolar transistors (HBTs) fabricated using reduced-pressure chemical vapor deposition (RPCVD) were investigated. A thin triangular Ge profile was noted as being very effective in enhancing the cutoff frequency (fT) while a thick base profile was good for both maximum oscillation frequency (fmax) and noise performance. For the noise characteristics, a thin base was inferior to a thick base. The importance of base optimization in high frequency applications of SiGe HBTs is discussed on the basis of the analyzed DC, small-signal, and noise characteristics.

AB - The effects of the base thickness and the Ge profile on the DC, the small-signal, and the noise characteristics of SiGe heterostructure bipolar transistors (HBTs) fabricated using reduced-pressure chemical vapor deposition (RPCVD) were investigated. A thin triangular Ge profile was noted as being very effective in enhancing the cutoff frequency (fT) while a thick base profile was good for both maximum oscillation frequency (fmax) and noise performance. For the noise characteristics, a thin base was inferior to a thick base. The importance of base optimization in high frequency applications of SiGe HBTs is discussed on the basis of the analyzed DC, small-signal, and noise characteristics.

KW - DC

KW - HBT

KW - Noise

KW - RF

KW - RPCVD

KW - SiGe

UR - https://www.scopus.com/pages/publications/0037298066

M3 - Journal article

AN - SCOPUS:0037298066

SN - 0374-4884

VL - 42

SP - 285

EP - 287

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - 2

ER -

Effect of base structure on the device characteristics of SiGe HBTs fabricated by reduced-pressure chemical vapor deposition

Abstract

Keywords

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