Effect of capping layer on In_xGa_1-xN quantum dots grown using nnad method by MOCVD

In_xGa_1-xN quantum dots (QDs) were grown on GaN epitaxy using nitridation of nano-alloyed droplet (NNAD) method by metal-organic chemical vapor deposition (MOCVD) system. Before the In_xGa _1-xN QDs formation, In + Ga droplets were initially formed by the flow of TMI and TMG, which acts as a nucleation seed for the QDs growth. Density of the alloy droplets was increased with the increasing flow rate; however, droplet size was scarcely changed about 100200 nm by flow rate. And In _xGa_1-xN QDs size can be easily changed by controlling the nitridation time or various factors. Also, the influence of GaN capping layer on the properties of In_xGa_1-xN QDs was discussed.