Effect of carbon co-doping on III-As based diluted magnetic semiconductors

H. K. Choi; S. B. Shim; K. S. Suh; Y. S. Kim; J. S. Lee; Z. G. Khim; I. T. Jeong; J. C. Woo; C. R. Abernatliy; S. J. Pearton; Y. D. Park

Effect of carbon co-doping on III-As based diluted magnetic semiconductors

H. K. Choi^*
, S. B. Shim
, K. S. Suh
, Y. S. Kim
, J. S. Lee
, Z. G. Khim
, I. T. Jeong
, J. C. Woo
, C. R. Abernatliy
, S. J. Pearton
, Y. D. Park

^*Corresponding author for this work

Department of Physics

Seoul National University
University of Florida
Korea Institute of Science and Technology

Research output: Contribution to journal › Conference article › peer-review

Abstract

We report on the magnetic and magneto-transport properties of carbon co-doped III-As based diluted magnetic semiconductors (DMS). Highly carbon doped GaAs and AlAs epilayers were realized by gas-source molecular beam epitaxy on semi-insulating GaAs substrates. The resulting epilayers were ion-implanted with various transition metal impurities.

Original language	English
Pages (from-to)	145-148
Number of pages	4
Journal	Institute of Physics Conference Series
Volume	184
State	Published - 2005
Event	31st International Symposium of Compound Semiconductors 2004 - Seoul, Korea, Republic of Duration: 2004.09.12 → 2004.12.16

Cite this

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title = "Effect of carbon co-doping on III-As based diluted magnetic semiconductors",

abstract = "We report on the magnetic and magneto-transport properties of carbon co-doped III-As based diluted magnetic semiconductors (DMS). Highly carbon doped GaAs and AlAs epilayers were realized by gas-source molecular beam epitaxy on semi-insulating GaAs substrates. The resulting epilayers were ion-implanted with various transition metal impurities.",

author = "Choi, \{H. K.\} and Shim, \{S. B.\} and Suh, \{K. S.\} and Kim, \{Y. S.\} and Lee, \{J. S.\} and Khim, \{Z. G.\} and Jeong, \{I. T.\} and Woo, \{J. C.\} and Abernatliy, \{C. R.\} and Pearton, \{S. J.\} and Park, \{Y. D.\}",

year = "2005",

language = "English",

volume = "184",

pages = "145--148",

journal = "Institute of Physics Conference Series",

issn = "0951-3248",

note = "31st International Symposium of Compound Semiconductors 2004 ; Conference date: 12-09-2004 Through 16-12-2004",

}

TY - JOUR

T1 - Effect of carbon co-doping on III-As based diluted magnetic semiconductors

AU - Choi, H. K.

AU - Shim, S. B.

AU - Suh, K. S.

AU - Kim, Y. S.

AU - Lee, J. S.

AU - Khim, Z. G.

AU - Jeong, I. T.

AU - Woo, J. C.

AU - Abernatliy, C. R.

AU - Pearton, S. J.

AU - Park, Y. D.

PY - 2005

Y1 - 2005

N2 - We report on the magnetic and magneto-transport properties of carbon co-doped III-As based diluted magnetic semiconductors (DMS). Highly carbon doped GaAs and AlAs epilayers were realized by gas-source molecular beam epitaxy on semi-insulating GaAs substrates. The resulting epilayers were ion-implanted with various transition metal impurities.

AB - We report on the magnetic and magneto-transport properties of carbon co-doped III-As based diluted magnetic semiconductors (DMS). Highly carbon doped GaAs and AlAs epilayers were realized by gas-source molecular beam epitaxy on semi-insulating GaAs substrates. The resulting epilayers were ion-implanted with various transition metal impurities.

UR - https://www.scopus.com/pages/publications/33644526580

M3 - Conference article

AN - SCOPUS:33644526580

SN - 0951-3248

VL - 184

SP - 145

EP - 148

JO - Institute of Physics Conference Series

JF - Institute of Physics Conference Series

T2 - 31st International Symposium of Compound Semiconductors 2004

Y2 - 12 September 2004 through 16 December 2004

ER -

Effect of carbon co-doping on III-As based diluted magnetic semiconductors

Abstract

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