Effect of NH3 plasma treatment on the device performance of ZnO based thin film transistors

R. Navamathavan; R. Nirmala; Cheul Ro Lee

doi:10.1016/j.vacuum.2011.01.008

Effect of NH₃ plasma treatment on the device performance of ZnO based thin film transistors

R. Navamathavan^*
, R. Nirmala
, Cheul Ro Lee

^*Corresponding author for this work

Information Materials Engineering

Jeonbuk National University

Research output: Contribution to journal › Journal article › peer-review

19 Scopus citations

Abstract

We fabricated an enhancement-mode thin film transistor (TFT) using ZnO as an active channel layer deposited by radio frequency (rf) magnetron sputtering. The NH₃ plasma passivation was performed in order to improve the electrical properties of the ZnO TFTs. We observed that the NH₃ plasma treated ZnO TFTs revealed improved device performances, which include the field effect mobility of 34 cm²/Vs, threshold voltage of 14 V, subthreshold swing of 0.44 V/dec, off-current of 10^-11 A and on to off ratio higher than 10⁵. These results demonstrate that NH ₃ plasma treatment could effectively enhance the performance of the ZnO based TFT device.

Original language	English
Pages (from-to)	904-907
Number of pages	4
Journal	Vacuum
Volume	85
Issue number	9
DOIs	https://doi.org/10.1016/j.vacuum.2011.01.008
State	Published - 2011.02.25

Keywords

Electrical properties
NH plasma treatment
Thin film transistor
Zinc oxide

Quacquarelli Symonds(QS) Subject Topics

Materials Science
Physics & Astronomy

Access to Document

10.1016/j.vacuum.2011.01.008

Cite this

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title = "Effect of NH3 plasma treatment on the device performance of ZnO based thin film transistors",

abstract = "We fabricated an enhancement-mode thin film transistor (TFT) using ZnO as an active channel layer deposited by radio frequency (rf) magnetron sputtering. The NH3 plasma passivation was performed in order to improve the electrical properties of the ZnO TFTs. We observed that the NH3 plasma treated ZnO TFTs revealed improved device performances, which include the field effect mobility of 34 cm2/Vs, threshold voltage of 14 V, subthreshold swing of 0.44 V/dec, off-current of 10-11 A and on to off ratio higher than 105. These results demonstrate that NH 3 plasma treatment could effectively enhance the performance of the ZnO based TFT device.",

keywords = "Electrical properties, NH plasma treatment, Thin film transistor, Zinc oxide",

author = "R. Navamathavan and R. Nirmala and Lee, \{Cheul Ro\}",

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doi = "10.1016/j.vacuum.2011.01.008",

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journal = "Vacuum",

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TY - JOUR

T1 - Effect of NH3 plasma treatment on the device performance of ZnO based thin film transistors

AU - Navamathavan, R.

AU - Nirmala, R.

AU - Lee, Cheul Ro

PY - 2011/2/25

Y1 - 2011/2/25

N2 - We fabricated an enhancement-mode thin film transistor (TFT) using ZnO as an active channel layer deposited by radio frequency (rf) magnetron sputtering. The NH3 plasma passivation was performed in order to improve the electrical properties of the ZnO TFTs. We observed that the NH3 plasma treated ZnO TFTs revealed improved device performances, which include the field effect mobility of 34 cm2/Vs, threshold voltage of 14 V, subthreshold swing of 0.44 V/dec, off-current of 10-11 A and on to off ratio higher than 105. These results demonstrate that NH 3 plasma treatment could effectively enhance the performance of the ZnO based TFT device.

AB - We fabricated an enhancement-mode thin film transistor (TFT) using ZnO as an active channel layer deposited by radio frequency (rf) magnetron sputtering. The NH3 plasma passivation was performed in order to improve the electrical properties of the ZnO TFTs. We observed that the NH3 plasma treated ZnO TFTs revealed improved device performances, which include the field effect mobility of 34 cm2/Vs, threshold voltage of 14 V, subthreshold swing of 0.44 V/dec, off-current of 10-11 A and on to off ratio higher than 105. These results demonstrate that NH 3 plasma treatment could effectively enhance the performance of the ZnO based TFT device.

KW - Electrical properties

KW - NH plasma treatment

KW - Thin film transistor

KW - Zinc oxide

UR - https://www.scopus.com/pages/publications/79952451339

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DO - 10.1016/j.vacuum.2011.01.008

M3 - Journal article

AN - SCOPUS:79952451339

SN - 0042-207X

VL - 85

SP - 904

EP - 907

JO - Vacuum

JF - Vacuum

IS - 9

ER -