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Effect of solvent additives on bulk heterojunction morphology of organic photovoltaics and their impact on device performance

  • Won Tae Choi
  • , Jiyun Song
  • , Jongkuk Ko
  • , Yeongseon Jang
  • , Tae Hwan Kim
  • , Young Soo Han
  • , Jeewoo Lim*
  • , Changhee Lee
  • , Kookheon Char
  • *Corresponding author for this work
  • Seoul National University
  • Korea Atomic Energy Research Institute

Research output: Contribution to journalJournal articlepeer-review

Abstract

Morphology of the active layer in an organic photovoltaic (OPV) device is known to have a significant impact on the device performance. It is, however, difficult to characterize nanoscale morphologies in detail, especially at the ensemble level. Herein, we report the utilization of small angle neutron scattering (SANS) to investigate variations in the nanoscale morphologies of the active layer of poly(3-hexylthiophene-2,5-diyl):[6,6]-phenyl-C61-butyric acid methyl ester (P3HT:PCBM) bulk heterojunction OPV depending on the composition of casting solvent. Both the power law and the poly hard sphere model were utilized to characterize the state of the donor and acceptor components, respectively, from the obtained SANS data. Furthermore, the relationship between the nanoscale morphology and device performance is outlined. It was found that the use of 2-chlorophenol, a poor solvent for P3HT and, at the same time, a very good solvent for PCBM, leads to nanomorphology featuring ordered, highly crystalline P3HT and small (15.2 nm) PCBM domains.

Original languageEnglish
Pages (from-to)128-134
Number of pages7
JournalJournal of Polymer Science, Part B: Polymer Physics
Volume54
Issue number2
DOIs
StatePublished - 2016.01.15

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

  1. SDG 7 - Affordable and Clean Energy
    SDG 7 Affordable and Clean Energy

Keywords

  • additives
  • conducting polymers
  • Fullerenes
  • interpenetrating networks (IPN)
  • neutron scattering
  • P3HT:PCBM
  • small angle neutron scattering (SANS)

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