Effect of substrate strain on lattice structure, electrical resistivity, and optical conductivity of Nd0.5 Sr0.5 MnO3 thin films grown on SrTiO3

S. Y. Jang; N. Nakagawa; S. J. Moon; T. Susaki; K. W. Kim; Y. S. Lee; H. Y. Hwang; K. Myung-Whun

doi:10.1016/j.ssc.2009.07.025

Effect of substrate strain on lattice structure, electrical resistivity, and optical conductivity of Nd_0.5 Sr_0.5 MnO₃ thin films grown on SrTiO₃

S. Y. Jang
, N. Nakagawa
, S. J. Moon
, T. Susaki
, K. W. Kim
, Y. S. Lee
, H. Y. Hwang
, K. Myung-Whun^*

^*Corresponding author for this work

Department of Physics

Research output: Contribution to journal › Journal article › peer-review

8 Scopus citations

Abstract

In this study, we investigated the lattice structure, electrical resistivity, and optical conductivity of Nd_0.5Sr_0.5MnO₃ thin films grown on SrTiO₃ (001) and SrTiO₃ (011) substrates. The thin film on SrTiO₃ (001) experiences isotropic tensile strain and shows characteristics of the semiconducting ground state. On the other hand, the thin film on SrTiO₃ (011) experiences anisotropic tensile strain, which means that one of the two in-plane lattice axes is fixed by the substrate lattice and the other axis is relaxed. The thin film shows the insulator-metal phase transition at 220 K and characteristics of the charge-ordered insulating ground state below 150 K. By comparing the single crystal data of the lattice along with the resistivity and optical conductivity, we suggest that the substrate strain affects the electronic structure as well as the carrier dynamics of the Nd_0.5Sr_0.5MnO₃ thin films. We propose the possible ground states formed in the thin films.

Original language	English
Pages (from-to)	1760-1764
Number of pages	5
Journal	Solid State Communications
Volume	149
Issue number	41-42
DOIs	https://doi.org/10.1016/j.ssc.2009.07.025
State	Published - 2009.11

Keywords

A. NdSrMnO thin film
B. PLD
C. Strain
D. Optical conductivity

Quacquarelli Symonds(QS) Subject Topics

Materials Science
Chemistry
Physics & Astronomy

Access to Document

10.1016/j.ssc.2009.07.025

Cite this

@article{715fd0ccb3a0464f9d5be38a714c0a27,

title = "Effect of substrate strain on lattice structure, electrical resistivity, and optical conductivity of Nd0.5 Sr0.5 MnO3 thin films grown on SrTiO3",

abstract = "In this study, we investigated the lattice structure, electrical resistivity, and optical conductivity of Nd0.5Sr0.5MnO3 thin films grown on SrTiO3 (001) and SrTiO3 (011) substrates. The thin film on SrTiO3 (001) experiences isotropic tensile strain and shows characteristics of the semiconducting ground state. On the other hand, the thin film on SrTiO3 (011) experiences anisotropic tensile strain, which means that one of the two in-plane lattice axes is fixed by the substrate lattice and the other axis is relaxed. The thin film shows the insulator-metal phase transition at 220 K and characteristics of the charge-ordered insulating ground state below 150 K. By comparing the single crystal data of the lattice along with the resistivity and optical conductivity, we suggest that the substrate strain affects the electronic structure as well as the carrier dynamics of the Nd0.5Sr0.5MnO3 thin films. We propose the possible ground states formed in the thin films.",

keywords = "A. NdSrMnO thin film, B. PLD, C. Strain, D. Optical conductivity",

author = "Jang, \{S. Y.\} and N. Nakagawa and Moon, \{S. J.\} and T. Susaki and Kim, \{K. W.\} and Lee, \{Y. S.\} and Hwang, \{H. Y.\} and K. Myung-Whun",

year = "2009",

month = nov,

doi = "10.1016/j.ssc.2009.07.025",

language = "English",

volume = "149",

pages = "1760--1764",

journal = "Solid State Communications",

issn = "0038-1098",

number = "41-42",

}

TY - JOUR

T1 - Effect of substrate strain on lattice structure, electrical resistivity, and optical conductivity of Nd0.5 Sr0.5 MnO3 thin films grown on SrTiO3

AU - Jang, S. Y.

AU - Nakagawa, N.

AU - Moon, S. J.

AU - Susaki, T.

AU - Kim, K. W.

AU - Lee, Y. S.

AU - Hwang, H. Y.

AU - Myung-Whun, K.

PY - 2009/11

Y1 - 2009/11

N2 - In this study, we investigated the lattice structure, electrical resistivity, and optical conductivity of Nd0.5Sr0.5MnO3 thin films grown on SrTiO3 (001) and SrTiO3 (011) substrates. The thin film on SrTiO3 (001) experiences isotropic tensile strain and shows characteristics of the semiconducting ground state. On the other hand, the thin film on SrTiO3 (011) experiences anisotropic tensile strain, which means that one of the two in-plane lattice axes is fixed by the substrate lattice and the other axis is relaxed. The thin film shows the insulator-metal phase transition at 220 K and characteristics of the charge-ordered insulating ground state below 150 K. By comparing the single crystal data of the lattice along with the resistivity and optical conductivity, we suggest that the substrate strain affects the electronic structure as well as the carrier dynamics of the Nd0.5Sr0.5MnO3 thin films. We propose the possible ground states formed in the thin films.

AB - In this study, we investigated the lattice structure, electrical resistivity, and optical conductivity of Nd0.5Sr0.5MnO3 thin films grown on SrTiO3 (001) and SrTiO3 (011) substrates. The thin film on SrTiO3 (001) experiences isotropic tensile strain and shows characteristics of the semiconducting ground state. On the other hand, the thin film on SrTiO3 (011) experiences anisotropic tensile strain, which means that one of the two in-plane lattice axes is fixed by the substrate lattice and the other axis is relaxed. The thin film shows the insulator-metal phase transition at 220 K and characteristics of the charge-ordered insulating ground state below 150 K. By comparing the single crystal data of the lattice along with the resistivity and optical conductivity, we suggest that the substrate strain affects the electronic structure as well as the carrier dynamics of the Nd0.5Sr0.5MnO3 thin films. We propose the possible ground states formed in the thin films.

KW - A. NdSrMnO thin film

KW - B. PLD

KW - C. Strain

KW - D. Optical conductivity

UR - https://www.scopus.com/pages/publications/69849103582

U2 - 10.1016/j.ssc.2009.07.025

DO - 10.1016/j.ssc.2009.07.025

M3 - Journal article

AN - SCOPUS:69849103582

SN - 0038-1098

VL - 149

SP - 1760

EP - 1764

JO - Solid State Communications

JF - Solid State Communications

IS - 41-42

ER -