Effect of UV lamp irradiation during oxidation of Zr/Pt/Si structure on electrical properties of Pt/ZrO                         2                         /Pt/Si structure

Joon Woo Bae; Jae Won Lim; Kouji Mimura; Masahito Uchikoshi; Takamichi Miyazaki; Minoru Isshiki

doi:10.1016/j.apsusc.2009.12.101

Effect of UV lamp irradiation during oxidation of Zr/Pt/Si structure on electrical properties of Pt/ZrO ₂ /Pt/Si structure

Joon Woo Bae
, Jae Won Lim^*
, Kouji Mimura
, Masahito Uchikoshi
, Takamichi Miyazaki
, Minoru Isshiki

^*Corresponding author for this work

Metallurgical System Engineering

Tohoku University
Korea Institute of Geoscience and Mineral Resources

Research output: Contribution to journal › Journal article › peer-review

1 Scopus citations

Abstract

Metal-insulator-metal (MIM) capacitors were fabricated using ZrO ₂ films and the effects of structural and native defects of the ZrO ₂ films on the electrical and dielectric properties were investigated. For preparing ZrO ₂ films, Zr films were deposited on Pt/Si substrates by ion beam deposition (IBD) system with/without substrate bias voltages and oxidized at 200 °C for 60 min under 0.1 MPa O ₂ atmosphere with/without UV light irradiation (λ = 193 nm, Deep UV lamp). The ZrO ₂ (∼12 nm) films on Pt(∼100 nm)/Si were characterized by X-ray diffraction pattern (XRD), field emission scanning electron microscopy (FE-SEM) and high-resolution transmission electron microscopy (HRTEM), capacitance-voltage (C-V) and current-voltage (I-V) measurements were carried out on MIM structures. ZrO ₂ films, fabricated by oxidizing the Zr film deposited with substrate bias voltage under UV light irradiation, show the highest capacitance (784 pF) and the lowest leakage current density. The active oxygen species formed by UV irradiation are considered to play an important role in the reduction of the leakage current density, because they can reduce the density of oxygen vacancies.

Original language	English
Pages (from-to)	3518-3521
Number of pages	4
Journal	Applied Surface Science
Volume	256
Issue number	11
DOIs	https://doi.org/10.1016/j.apsusc.2009.12.101
State	Published - 2010.03.15

Keywords

C-V
Defect
I-V
MIM capacitor
Substrate bias voltage
UV light irradiation

Access to Document

10.1016/j.apsusc.2009.12.101

Cite this

@article{c9037c7c6a8f4790b46d498c539d9fa1,

title = "Effect of UV lamp irradiation during oxidation of Zr/Pt/Si structure on electrical properties of Pt/ZrO 2 /Pt/Si structure",

abstract = " Metal-insulator-metal (MIM) capacitors were fabricated using ZrO 2 films and the effects of structural and native defects of the ZrO 2 films on the electrical and dielectric properties were investigated. For preparing ZrO 2 films, Zr films were deposited on Pt/Si substrates by ion beam deposition (IBD) system with/without substrate bias voltages and oxidized at 200 °C for 60 min under 0.1 MPa O 2 atmosphere with/without UV light irradiation (λ = 193 nm, Deep UV lamp). The ZrO 2 (∼12 nm) films on Pt(∼100 nm)/Si were characterized by X-ray diffraction pattern (XRD), field emission scanning electron microscopy (FE-SEM) and high-resolution transmission electron microscopy (HRTEM), capacitance-voltage (C-V) and current-voltage (I-V) measurements were carried out on MIM structures. ZrO 2 films, fabricated by oxidizing the Zr film deposited with substrate bias voltage under UV light irradiation, show the highest capacitance (784 pF) and the lowest leakage current density. The active oxygen species formed by UV irradiation are considered to play an important role in the reduction of the leakage current density, because they can reduce the density of oxygen vacancies.",

keywords = "C-V, Defect, I-V, MIM capacitor, Substrate bias voltage, UV light irradiation",

author = "Bae, \{Joon Woo\} and Lim, \{Jae Won\} and Kouji Mimura and Masahito Uchikoshi and Takamichi Miyazaki and Minoru Isshiki",

year = "2010",

month = mar,

day = "15",

doi = "10.1016/j.apsusc.2009.12.101",

language = "English",

volume = "256",

pages = "3518--3521",

journal = "Applied Surface Science",

issn = "0169-4332",

number = "11",

}

Effect of UV lamp irradiation during oxidation of Zr/Pt/Si structure on electrical properties of Pt/ZrO ₂ /Pt/Si structure. / Bae, Joon Woo; Lim, Jae Won; Mimura, Kouji et al.
In: Applied Surface Science, Vol. 256, No. 11, 15.03.2010, p. 3518-3521.

Research output: Contribution to journal › Journal article › peer-review

TY - JOUR

T1 - Effect of UV lamp irradiation during oxidation of Zr/Pt/Si structure on electrical properties of Pt/ZrO 2 /Pt/Si structure

AU - Bae, Joon Woo

AU - Lim, Jae Won

AU - Mimura, Kouji

AU - Uchikoshi, Masahito

AU - Miyazaki, Takamichi

AU - Isshiki, Minoru

PY - 2010/3/15

Y1 - 2010/3/15

N2 - Metal-insulator-metal (MIM) capacitors were fabricated using ZrO 2 films and the effects of structural and native defects of the ZrO 2 films on the electrical and dielectric properties were investigated. For preparing ZrO 2 films, Zr films were deposited on Pt/Si substrates by ion beam deposition (IBD) system with/without substrate bias voltages and oxidized at 200 °C for 60 min under 0.1 MPa O 2 atmosphere with/without UV light irradiation (λ = 193 nm, Deep UV lamp). The ZrO 2 (∼12 nm) films on Pt(∼100 nm)/Si were characterized by X-ray diffraction pattern (XRD), field emission scanning electron microscopy (FE-SEM) and high-resolution transmission electron microscopy (HRTEM), capacitance-voltage (C-V) and current-voltage (I-V) measurements were carried out on MIM structures. ZrO 2 films, fabricated by oxidizing the Zr film deposited with substrate bias voltage under UV light irradiation, show the highest capacitance (784 pF) and the lowest leakage current density. The active oxygen species formed by UV irradiation are considered to play an important role in the reduction of the leakage current density, because they can reduce the density of oxygen vacancies.

AB - Metal-insulator-metal (MIM) capacitors were fabricated using ZrO 2 films and the effects of structural and native defects of the ZrO 2 films on the electrical and dielectric properties were investigated. For preparing ZrO 2 films, Zr films were deposited on Pt/Si substrates by ion beam deposition (IBD) system with/without substrate bias voltages and oxidized at 200 °C for 60 min under 0.1 MPa O 2 atmosphere with/without UV light irradiation (λ = 193 nm, Deep UV lamp). The ZrO 2 (∼12 nm) films on Pt(∼100 nm)/Si were characterized by X-ray diffraction pattern (XRD), field emission scanning electron microscopy (FE-SEM) and high-resolution transmission electron microscopy (HRTEM), capacitance-voltage (C-V) and current-voltage (I-V) measurements were carried out on MIM structures. ZrO 2 films, fabricated by oxidizing the Zr film deposited with substrate bias voltage under UV light irradiation, show the highest capacitance (784 pF) and the lowest leakage current density. The active oxygen species formed by UV irradiation are considered to play an important role in the reduction of the leakage current density, because they can reduce the density of oxygen vacancies.

KW - C-V

KW - Defect

KW - I-V

KW - MIM capacitor

KW - Substrate bias voltage

KW - UV light irradiation

UR - https://www.scopus.com/pages/publications/77649189957

U2 - 10.1016/j.apsusc.2009.12.101

DO - 10.1016/j.apsusc.2009.12.101

M3 - Journal article

AN - SCOPUS:77649189957

SN - 0169-4332

VL - 256

SP - 3518

EP - 3521

JO - Applied Surface Science

JF - Applied Surface Science

IS - 11

ER -

Effect of UV lamp irradiation during oxidation of Zr/Pt/Si structure on electrical properties of Pt/ZrO ₂ /Pt/Si structure

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this