Effective metal work function of high-pressure hydrogen postannealed Pt-Er alloy metal gate on HfO2 film

Cheljong Choi; Moongyu Jang; Yarkyeon Kim; Myungsim Jun; Taeyoub Kim; Byoungchul Park; Seongjae Lee; Hyundoek Yang; Ranju Jung; Man Chang; Hyunsang Hwang

doi:10.1143/JJAP.46.125

Effective metal work function of high-pressure hydrogen postannealed Pt-Er alloy metal gate on HfO₂ film

Cheljong Choi^*
, Moongyu Jang
, Yarkyeon Kim
, Myungsim Jun
, Taeyoub Kim
, Byoungchul Park
, Seongjae Lee
, Hyundoek Yang
, Ranju Jung
, Man Chang
, Hyunsang Hwang

^*Corresponding author for this work

Department of Semiconductor Science and Technology

Electronics and Telecommunications Research Institute
Samsung
Gwangju Institute of Science and Technology

Research output: Contribution to journal › Journal article › peer-review

8 Scopus citations

Abstract

We have investigated the effect of high-pressure hydrogen postannealing (HPHA) on the effective metal work function (Φ_m,eff) of a Pt-Er alloy metal gate on a HfO₂ film. By considering the presence of an interfacial layer (IL) between the HfO₂ film and a Si substrate and a negative charge at the HfO₂/IL interface, the Φ_m,eff values of the Pt-Er alloy metal gate before and after HPHA, extracted from the relations of equivalent oxide thickness versus flat-band voltage, are determined to be ∼5.1 and ∼4.8eV, respectively. The increase in the density of interface dipole caused by the reduction of PtO_x during HPHA could be responsible for the decrease in Φ_m,eff.

Original language	English
Pages (from-to)	125-127
Number of pages	3
Journal	Japanese Journal of Applied Physics
Volume	46
Issue number	1
DOIs	https://doi.org/10.1143/JJAP.46.125
State	Published - 2007.01.10

Keywords

Ettective metal work function
High pressure hydrogen annealing
HiO
Metal gate
Pt-Er alloy

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10.1143/JJAP.46.125

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title = "Effective metal work function of high-pressure hydrogen postannealed Pt-Er alloy metal gate on HfO2 film",

abstract = "We have investigated the effect of high-pressure hydrogen postannealing (HPHA) on the effective metal work function (Φm,eff) of a Pt-Er alloy metal gate on a HfO2 film. By considering the presence of an interfacial layer (IL) between the HfO2 film and a Si substrate and a negative charge at the HfO2/IL interface, the Φm,eff values of the Pt-Er alloy metal gate before and after HPHA, extracted from the relations of equivalent oxide thickness versus flat-band voltage, are determined to be ∼5.1 and ∼4.8eV, respectively. The increase in the density of interface dipole caused by the reduction of PtOx during HPHA could be responsible for the decrease in Φm,eff.",

keywords = "Ettective metal work function, High pressure hydrogen annealing, HiO, Metal gate, Pt-Er alloy",

author = "Cheljong Choi and Moongyu Jang and Yarkyeon Kim and Myungsim Jun and Taeyoub Kim and Byoungchul Park and Seongjae Lee and Hyundoek Yang and Ranju Jung and Man Chang and Hyunsang Hwang",

year = "2007",

month = jan,

day = "10",

doi = "10.1143/JJAP.46.125",

language = "English",

volume = "46",

pages = "125--127",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

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TY - JOUR

T1 - Effective metal work function of high-pressure hydrogen postannealed Pt-Er alloy metal gate on HfO2 film

AU - Choi, Cheljong

AU - Jang, Moongyu

AU - Kim, Yarkyeon

AU - Jun, Myungsim

AU - Kim, Taeyoub

AU - Park, Byoungchul

AU - Lee, Seongjae

AU - Yang, Hyundoek

AU - Jung, Ranju

AU - Chang, Man

AU - Hwang, Hyunsang

PY - 2007/1/10

Y1 - 2007/1/10

N2 - We have investigated the effect of high-pressure hydrogen postannealing (HPHA) on the effective metal work function (Φm,eff) of a Pt-Er alloy metal gate on a HfO2 film. By considering the presence of an interfacial layer (IL) between the HfO2 film and a Si substrate and a negative charge at the HfO2/IL interface, the Φm,eff values of the Pt-Er alloy metal gate before and after HPHA, extracted from the relations of equivalent oxide thickness versus flat-band voltage, are determined to be ∼5.1 and ∼4.8eV, respectively. The increase in the density of interface dipole caused by the reduction of PtOx during HPHA could be responsible for the decrease in Φm,eff.

AB - We have investigated the effect of high-pressure hydrogen postannealing (HPHA) on the effective metal work function (Φm,eff) of a Pt-Er alloy metal gate on a HfO2 film. By considering the presence of an interfacial layer (IL) between the HfO2 film and a Si substrate and a negative charge at the HfO2/IL interface, the Φm,eff values of the Pt-Er alloy metal gate before and after HPHA, extracted from the relations of equivalent oxide thickness versus flat-band voltage, are determined to be ∼5.1 and ∼4.8eV, respectively. The increase in the density of interface dipole caused by the reduction of PtOx during HPHA could be responsible for the decrease in Φm,eff.

KW - Ettective metal work function

KW - High pressure hydrogen annealing

KW - HiO

KW - Metal gate

KW - Pt-Er alloy

UR - https://www.scopus.com/pages/publications/34547920015

U2 - 10.1143/JJAP.46.125

DO - 10.1143/JJAP.46.125

M3 - Journal article

AN - SCOPUS:34547920015

SN - 0021-4922

VL - 46

SP - 125

EP - 127

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 1

ER -

Effective metal work function of high-pressure hydrogen postannealed Pt-Er alloy metal gate on HfO₂ film

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Keywords

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