Effects of band-offset on the carrier lifetime in InAs quantum dots on InP substrates

Y. D. Jang; N. J. Kim; H. Lee; D. Lee; S. H. Pyun; W. G. Jeong; J. W. Jang; D. K. Oh; Jin Soo Kim

doi:10.1063/1.2732403

Effects of band-offset on the carrier lifetime in InAs quantum dots on InP substrates

Y. D. Jang
, N. J. Kim
, H. Lee
, D. Lee^*
, S. H. Pyun
, W. G. Jeong
, J. W. Jang
, D. K. Oh
, Jin Soo Kim

^*Corresponding author for this work

Information Materials Engineering

Chungnam National University
Sungkyunkwan University
NanoEpi Technologies Corporation
Electronics and Telecommunications Research Institute

Research output: Contribution to journal › Journal article › peer-review

6 Scopus citations

Abstract

The carrier lifetime of an InAs/InGaAsP quantum dot (QD) on an InP substrate is measured to be twice that of an InAs/InAlGaAs QD on the same substrate, although the ground-state energy levels and barrier heights of these QDs are comparable. These differences are interpreted in terms of the smaller conduction band-offset in InAs/InGaAsP QDs compared to InAs/InAlGaAs QDs.

Original language	English
Article number	096103
Journal	Journal of Applied Physics
Volume	101
Issue number	9
DOIs	https://doi.org/10.1063/1.2732403
State	Published - 2007

Quacquarelli Symonds(QS) Subject Topics

Physics & Astronomy

Access to Document

10.1063/1.2732403

Cite this

@article{3e461e16aeee40bc8fed181736afaeff,

title = "Effects of band-offset on the carrier lifetime in InAs quantum dots on InP substrates",

abstract = "The carrier lifetime of an InAs/InGaAsP quantum dot (QD) on an InP substrate is measured to be twice that of an InAs/InAlGaAs QD on the same substrate, although the ground-state energy levels and barrier heights of these QDs are comparable. These differences are interpreted in terms of the smaller conduction band-offset in InAs/InGaAsP QDs compared to InAs/InAlGaAs QDs.",

author = "Jang, \{Y. D.\} and Kim, \{N. J.\} and H. Lee and D. Lee and Pyun, \{S. H.\} and Jeong, \{W. G.\} and Jang, \{J. W.\} and Oh, \{D. K.\} and Kim, \{Jin Soo\}",

year = "2007",

doi = "10.1063/1.2732403",

language = "English",

volume = "101",

journal = "Journal of Applied Physics",

issn = "0021-8979",

number = "9",

}

TY - JOUR

T1 - Effects of band-offset on the carrier lifetime in InAs quantum dots on InP substrates

AU - Jang, Y. D.

AU - Kim, N. J.

AU - Lee, H.

AU - Lee, D.

AU - Pyun, S. H.

AU - Jeong, W. G.

AU - Jang, J. W.

AU - Oh, D. K.

AU - Kim, Jin Soo

PY - 2007

Y1 - 2007

N2 - The carrier lifetime of an InAs/InGaAsP quantum dot (QD) on an InP substrate is measured to be twice that of an InAs/InAlGaAs QD on the same substrate, although the ground-state energy levels and barrier heights of these QDs are comparable. These differences are interpreted in terms of the smaller conduction band-offset in InAs/InGaAsP QDs compared to InAs/InAlGaAs QDs.

AB - The carrier lifetime of an InAs/InGaAsP quantum dot (QD) on an InP substrate is measured to be twice that of an InAs/InAlGaAs QD on the same substrate, although the ground-state energy levels and barrier heights of these QDs are comparable. These differences are interpreted in terms of the smaller conduction band-offset in InAs/InGaAsP QDs compared to InAs/InAlGaAs QDs.

UR - https://www.scopus.com/pages/publications/34248580039

U2 - 10.1063/1.2732403

DO - 10.1063/1.2732403

M3 - Journal article

AN - SCOPUS:34248580039

SN - 0021-8979

VL - 101

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 9

M1 - 096103

ER -

Effects of band-offset on the carrier lifetime in InAs quantum dots on InP substrates

Abstract

Quacquarelli Symonds(QS) Subject Topics

Access to Document

Other files and links

Fingerprint

Cite this