Effects of buffer concentration on sensing performances of ion-sensitive field-effect transistors wth si-nanowires

Chanoh Park; Kihyun Kim; Meyya Meyyappan; Donghoon Kim; Nanki Hong; Jeong Soo Lee

doi:10.1109/NANO.2015.7388881

Effects of buffer concentration on sensing performances of ion-sensitive field-effect transistors wth si-nanowires

Chanoh Park
, Kihyun Kim
, Meyya Meyyappan^*
, Donghoon Kim
, Nanki Hong
, Jeong Soo Lee

^*Corresponding author for this work

Division of Electronic Engineering

Pohang University of Science and Technology
NASA Ames Research Center

Research output: Contribution to conference › Conference paper › peer-review

Abstract

We have experimentally investigated the effect of buffer-dilution on sensing characteristics of the Si-nanowire (Si-NW) ion-sensitive field-effect transistors (ISFETs). Phosphate-buffered saline (PBS) with various buffer concentrations was prepared. The result showed that the sensitivity increases as the buffer concentration decreases for bio-molecule detection, while the pH sensitivity of the Si-NW FETs is insensitive to the buffer solutions. The Debye length of the buffer solution can be a crucial factor to detect biomolecules using FET sensors. For the buffer solution with high ionic strength, the Debye length becomes shorter than the distance between the sensing membrane and the target-molecules so that the charges of target-molecules are screened out. For the pH sensing, however, small hydrogen ions can be bound close to the channel surface and thus little dependence on the buffer concentration.

Original language	English
Title of host publication	IEEE-NANO 2015 - 15th International Conference on Nanotechnology
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1335-1338
Number of pages	4
ISBN (Electronic)	9781467381550
DOIs	https://doi.org/10.1109/NANO.2015.7388881
State	Published - 2015
Event	15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015 - Rome, Italy Duration: 2015.07.27 → 2015.07.30

Publication series

Name	IEEE-NANO 2015 - 15th International Conference on Nanotechnology

Conference

Conference	15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015
Country/Territory	Italy
City	Rome
Period	15.07.27 → 15.07.30

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 9 Industry, Innovation, and Infrastructure

Keywords

buffer concentration
Debye length
Nanofabrication
Nanosensors
Silicon nanoelectronics

Access to Document

10.1109/NANO.2015.7388881

Cite this

Park, C., Kim, K., Meyyappan, M., Kim, D., Hong, N., & Lee, J. S. (2015). Effects of buffer concentration on sensing performances of ion-sensitive field-effect transistors wth si-nanowires. In IEEE-NANO 2015 - 15th International Conference on Nanotechnology (pp. 1335-1338). Article 7388881 (IEEE-NANO 2015 - 15th International Conference on Nanotechnology). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/NANO.2015.7388881

Park, Chanoh ; Kim, Kihyun ; Meyyappan, Meyya et al. / Effects of buffer concentration on sensing performances of ion-sensitive field-effect transistors wth si-nanowires. IEEE-NANO 2015 - 15th International Conference on Nanotechnology. Institute of Electrical and Electronics Engineers Inc., 2015. pp. 1335-1338 (IEEE-NANO 2015 - 15th International Conference on Nanotechnology).

@inproceedings{200ab62015d744b89007ce29b925bd78,

title = "Effects of buffer concentration on sensing performances of ion-sensitive field-effect transistors wth si-nanowires",

abstract = "We have experimentally investigated the effect of buffer-dilution on sensing characteristics of the Si-nanowire (Si-NW) ion-sensitive field-effect transistors (ISFETs). Phosphate-buffered saline (PBS) with various buffer concentrations was prepared. The result showed that the sensitivity increases as the buffer concentration decreases for bio-molecule detection, while the pH sensitivity of the Si-NW FETs is insensitive to the buffer solutions. The Debye length of the buffer solution can be a crucial factor to detect biomolecules using FET sensors. For the buffer solution with high ionic strength, the Debye length becomes shorter than the distance between the sensing membrane and the target-molecules so that the charges of target-molecules are screened out. For the pH sensing, however, small hydrogen ions can be bound close to the channel surface and thus little dependence on the buffer concentration.",

keywords = "buffer concentration, Debye length, Nanofabrication, Nanosensors, Silicon nanoelectronics",

author = "Chanoh Park and Kihyun Kim and Meyya Meyyappan and Donghoon Kim and Nanki Hong and Lee, \{Jeong Soo\}",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; 15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015 ; Conference date: 27-07-2015 Through 30-07-2015",

year = "2015",

doi = "10.1109/NANO.2015.7388881",

language = "English",

series = "IEEE-NANO 2015 - 15th International Conference on Nanotechnology",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "1335--1338",

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}

Park, C, Kim, K, Meyyappan, M, Kim, D, Hong, N & Lee, JS 2015, Effects of buffer concentration on sensing performances of ion-sensitive field-effect transistors wth si-nanowires. in IEEE-NANO 2015 - 15th International Conference on Nanotechnology., 7388881, IEEE-NANO 2015 - 15th International Conference on Nanotechnology, Institute of Electrical and Electronics Engineers Inc., pp. 1335-1338, 15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015, Rome, Italy, 15.07.27. https://doi.org/10.1109/NANO.2015.7388881

Effects of buffer concentration on sensing performances of ion-sensitive field-effect transistors wth si-nanowires. / Park, Chanoh; Kim, Kihyun; Meyyappan, Meyya et al.
IEEE-NANO 2015 - 15th International Conference on Nanotechnology. Institute of Electrical and Electronics Engineers Inc., 2015. p. 1335-1338 7388881 (IEEE-NANO 2015 - 15th International Conference on Nanotechnology).

Research output: Contribution to conference › Conference paper › peer-review

TY - GEN

T1 - Effects of buffer concentration on sensing performances of ion-sensitive field-effect transistors wth si-nanowires

AU - Park, Chanoh

AU - Kim, Kihyun

AU - Meyyappan, Meyya

AU - Kim, Donghoon

AU - Hong, Nanki

AU - Lee, Jeong Soo

PY - 2015

Y1 - 2015

N2 - We have experimentally investigated the effect of buffer-dilution on sensing characteristics of the Si-nanowire (Si-NW) ion-sensitive field-effect transistors (ISFETs). Phosphate-buffered saline (PBS) with various buffer concentrations was prepared. The result showed that the sensitivity increases as the buffer concentration decreases for bio-molecule detection, while the pH sensitivity of the Si-NW FETs is insensitive to the buffer solutions. The Debye length of the buffer solution can be a crucial factor to detect biomolecules using FET sensors. For the buffer solution with high ionic strength, the Debye length becomes shorter than the distance between the sensing membrane and the target-molecules so that the charges of target-molecules are screened out. For the pH sensing, however, small hydrogen ions can be bound close to the channel surface and thus little dependence on the buffer concentration.

AB - We have experimentally investigated the effect of buffer-dilution on sensing characteristics of the Si-nanowire (Si-NW) ion-sensitive field-effect transistors (ISFETs). Phosphate-buffered saline (PBS) with various buffer concentrations was prepared. The result showed that the sensitivity increases as the buffer concentration decreases for bio-molecule detection, while the pH sensitivity of the Si-NW FETs is insensitive to the buffer solutions. The Debye length of the buffer solution can be a crucial factor to detect biomolecules using FET sensors. For the buffer solution with high ionic strength, the Debye length becomes shorter than the distance between the sensing membrane and the target-molecules so that the charges of target-molecules are screened out. For the pH sensing, however, small hydrogen ions can be bound close to the channel surface and thus little dependence on the buffer concentration.

KW - buffer concentration

KW - Debye length

KW - Nanofabrication

KW - Nanosensors

KW - Silicon nanoelectronics

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U2 - 10.1109/NANO.2015.7388881

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M3 - Conference paper

AN - SCOPUS:84964344016

T3 - IEEE-NANO 2015 - 15th International Conference on Nanotechnology

SP - 1335

EP - 1338

BT - IEEE-NANO 2015 - 15th International Conference on Nanotechnology

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015

Y2 - 27 July 2015 through 30 July 2015

ER -

Park C, Kim K, Meyyappan M, Kim D, Hong N, Lee JS. Effects of buffer concentration on sensing performances of ion-sensitive field-effect transistors wth si-nanowires. In IEEE-NANO 2015 - 15th International Conference on Nanotechnology. Institute of Electrical and Electronics Engineers Inc. 2015. p. 1335-1338. 7388881. (IEEE-NANO 2015 - 15th International Conference on Nanotechnology). doi: 10.1109/NANO.2015.7388881

Effects of buffer concentration on sensing performances of ion-sensitive field-effect transistors wth si-nanowires

Abstract

Publication series

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UN SDGs

Keywords

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