Abstract
A bidirectional transient voltage suppressor (TVS) Zener diode was fabricated with abrupt junctions using the lowerature epitaxy process. The effects of various electrostatic discharge (ESD) stresses on the electrical properties are demonstrated, such as the currentvoltage (IV) and 1/f noise power spectral density (PSD). Very sharp and uniform bidirectional multi-junctions result in good symmetric IV behavior over a wide range of operating temperatures of 300450 K. The differential resistance in the breakdown region is only 0.2, and the reverse leakage current density is completely suppressed to 1.5
| Original language | English |
|---|---|
| Pages (from-to) | 2125-2130 |
| Number of pages | 6 |
| Journal | Materials Transactions |
| Volume | 54 |
| Issue number | 11 |
| DOIs | |
| State | Published - 2013 |
Keywords
- 1/f noise
- Diode
- Electrical fast transient (EFT)
- Electrostatic discharge (ESD)
- Human body model (HBM)
- International electrotechnical commission (IEC)
- Machine model (MM)
- Transient voltage suppressor (TVS)
- Zener
Quacquarelli Symonds(QS) Subject Topics
- Materials Science
- Engineering - Mechanical
- Physics & Astronomy
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