Effects of high-pressure hydrogen postannealing on the electrical and structural properties of the Pt-Er alloy metal gate on HfO2 film

Chel Jong Choi; Moon Gyu Jang; Yark Yeon Kim; Myung Sim Jeon; Byoung Chul Park; Seong Jae Lee; Ran Ju Jung; Hyun Doek Yang; Man Chang; Hyun Sang Hwang

doi:10.1149/1.2197968

Effects of high-pressure hydrogen postannealing on the electrical and structural properties of the Pt-Er alloy metal gate on HfO₂ film

Chel Jong Choi^*
, Moon Gyu Jang
, Yark Yeon Kim
, Myung Sim Jeon
, Byoung Chul Park
, Seong Jae Lee
, Ran Ju Jung
, Hyun Doek Yang
, Man Chang
, Hyun Sang Hwang

^*Corresponding author for this work

Department of Semiconductor Science and Technology

Electronics and Telecommunications Research Institute
Samsung
Gwangju Institute of Science and Technology

Research output: Contribution to journal › Journal article › peer-review

1 Scopus citations

Abstract

High-pressure hydrogen postannealing effects on the electrical and structural properties of the Pt-Er alloy metal gate on HfO2 film have been investigated. It is shown that high-pressure hydrogen postannealing causes the removal of microvoids formed near the interface between Pt-Er alloy and HfO2 film, resulting in the increase of gate electrode contact areas, causing the decrease of equivalent oxide thickness. It is further shown that high-pressure hydrogen postannealing plays a role in the reduction of PtOx and the interface trap density, leading to the negative shift of flatband voltage and the improvement of the HfO2 interface quality.

Original language	English
Pages (from-to)	G228-G230
Journal	Electrochemical and Solid-State Letters
Volume	9
Issue number	7
DOIs	https://doi.org/10.1149/1.2197968
State	Published - 2006.07

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title = "Effects of high-pressure hydrogen postannealing on the electrical and structural properties of the Pt-Er alloy metal gate on HfO2 film",

abstract = "High-pressure hydrogen postannealing effects on the electrical and structural properties of the Pt-Er alloy metal gate on HfO2 film have been investigated. It is shown that high-pressure hydrogen postannealing causes the removal of microvoids formed near the interface between Pt-Er alloy and HfO2 film, resulting in the increase of gate electrode contact areas, causing the decrease of equivalent oxide thickness. It is further shown that high-pressure hydrogen postannealing plays a role in the reduction of PtOx and the interface trap density, leading to the negative shift of flatband voltage and the improvement of the HfO2 interface quality.",

author = "Choi, \{Chel Jong\} and Jang, \{Moon Gyu\} and Kim, \{Yark Yeon\} and Jeon, \{Myung Sim\} and Park, \{Byoung Chul\} and Lee, \{Seong Jae\} and Jung, \{Ran Ju\} and Yang, \{Hyun Doek\} and Man Chang and Hwang, \{Hyun Sang\}",

year = "2006",

month = jul,

doi = "10.1149/1.2197968",

language = "English",

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journal = "Electrochemical and Solid-State Letters",

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TY - JOUR

T1 - Effects of high-pressure hydrogen postannealing on the electrical and structural properties of the Pt-Er alloy metal gate on HfO2 film

AU - Choi, Chel Jong

AU - Jang, Moon Gyu

AU - Kim, Yark Yeon

AU - Jeon, Myung Sim

AU - Park, Byoung Chul

AU - Lee, Seong Jae

AU - Jung, Ran Ju

AU - Yang, Hyun Doek

AU - Chang, Man

AU - Hwang, Hyun Sang

PY - 2006/7

Y1 - 2006/7

N2 - High-pressure hydrogen postannealing effects on the electrical and structural properties of the Pt-Er alloy metal gate on HfO2 film have been investigated. It is shown that high-pressure hydrogen postannealing causes the removal of microvoids formed near the interface between Pt-Er alloy and HfO2 film, resulting in the increase of gate electrode contact areas, causing the decrease of equivalent oxide thickness. It is further shown that high-pressure hydrogen postannealing plays a role in the reduction of PtOx and the interface trap density, leading to the negative shift of flatband voltage and the improvement of the HfO2 interface quality.

AB - High-pressure hydrogen postannealing effects on the electrical and structural properties of the Pt-Er alloy metal gate on HfO2 film have been investigated. It is shown that high-pressure hydrogen postannealing causes the removal of microvoids formed near the interface between Pt-Er alloy and HfO2 film, resulting in the increase of gate electrode contact areas, causing the decrease of equivalent oxide thickness. It is further shown that high-pressure hydrogen postannealing plays a role in the reduction of PtOx and the interface trap density, leading to the negative shift of flatband voltage and the improvement of the HfO2 interface quality.

UR - https://www.scopus.com/pages/publications/33646895503

U2 - 10.1149/1.2197968

DO - 10.1149/1.2197968

M3 - Journal article

AN - SCOPUS:33646895503

SN - 1099-0062

VL - 9

SP - G228-G230

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 7

ER -

Effects of high-pressure hydrogen postannealing on the electrical and structural properties of the Pt-Er alloy metal gate on HfO₂ film

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