Effects of laterally overgrown n-GaN thickness on defect and deep level concentrations
- A. Y. Polyakov
- , N. B. Smirnov
- , A. V. Govorkov
- , A. V. Markov
- , E. B. Yakimov
- , P. S. Vergeles
- , In Hwan Lee
- , Cheul Ro Lee
- , S. J. Pearton
- Institute of Rare Metals
- Russian Academy of Sciences
- Jeonbuk National University
- University of Florida
Research output: Contribution to journal › Journal article › peer-review
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