Skip to main navigation Skip to search Skip to main content

Effects of local gates on the electrical transport of single-walled carbon nanotubes

  • Jong Wan Park*
  • , Ju Jin Kim
  • , Jinhee Kim
  • , Kyung Hwa Yoo
  • *Corresponding author for this work
  • Jeonbuk National University
  • Korea Research Institute of Standards and Science
  • Yonsei University

Research output: Contribution to journalConference articlepeer-review

Abstract

We have studied the effect of local gates on the electrical transport properties of single-walled carbon nanotubes (SWNT). The local gate have been incorporated into individual SWNT by depositing Al top gate in between Au/Ti electrodes. Noticeable increase of resistance was observed after the deposition of the Al top gates, implying that the Al top gate acted as a barrier for electrical conduction.

Original languageEnglish
Pages (from-to)216-217
Number of pages2
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume18
Issue number1-3
DOIs
StatePublished - 2003.05
Event23rd International Conference on Low Temperature Physics - Hiroshima, Japan
Duration: 2002.08.202002.08.27

Keywords

  • Carbon nanotube
  • Field effect transistor
  • Single-electron tunneling

Quacquarelli Symonds(QS) Subject Topics

  • Materials Science
  • Physics & Astronomy

Fingerprint

Dive into the research topics of 'Effects of local gates on the electrical transport of single-walled carbon nanotubes'. Together they form a unique fingerprint.

Cite this