Abstract
We have studied the effect of local gates on the electrical transport properties of single-walled carbon nanotubes (SWNT). The local gate have been incorporated into individual SWNT by depositing Al top gate in between Au/Ti electrodes. Noticeable increase of resistance was observed after the deposition of the Al top gates, implying that the Al top gate acted as a barrier for electrical conduction.
| Original language | English |
|---|---|
| Pages (from-to) | 216-217 |
| Number of pages | 2 |
| Journal | Physica E: Low-Dimensional Systems and Nanostructures |
| Volume | 18 |
| Issue number | 1-3 |
| DOIs | |
| State | Published - 2003.05 |
| Event | 23rd International Conference on Low Temperature Physics - Hiroshima, Japan Duration: 2002.08.20 → 2002.08.27 |
Keywords
- Carbon nanotube
- Field effect transistor
- Single-electron tunneling
Quacquarelli Symonds(QS) Subject Topics
- Materials Science
- Physics & Astronomy
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