Effects of oxygen source on film properties of atomic-layer-deposited la-silicate film using La[N(SiMe3)2]3

Yu Jin Choi; Seok Jun Won; Hyung Suk Jung; Sanghyun Park; Deok Yong Cho; Cheol Seong Hwang; Tae Joo Park; Hyeong Joon Kim

doi:10.1149/2.014201ssl

Effects of oxygen source on film properties of atomic-layer-deposited la-silicate film using La[N(SiMe₃)₂]₃

Yu Jin Choi
, Seok Jun Won
, Hyung Suk Jung
, Sanghyun Park
, Deok Yong Cho
, Cheol Seong Hwang
, Tae Joo Park
, Hyeong Joon Kim

Department of Physics

Seoul National University
RWTH Aachen University
Hanyang University

Research output: Contribution to journal › Journal article › peer-review

7 Scopus citations

Abstract

The effect of oxygen sources, i.e. O₃ or H₂O, on chemical composition, dielectric constant and leakage current density of atomiclayer- deposited La-silicate films was examined. The dielectric constant of La-silicate films grown using O3 was ∼8.0, which was lower than that of La-silicate films grown using H₂O, ∼11.7 due to the higher Si concentrations. However, leakage current density of La-silicate films grown using O₃ was about 3 orders of magnitude lower than that of La-silicate films grown using H₂O at an identical capacitance-equivalent-thickness (but almost half the physical thickness), due to the higher Si concentrations and less La-carbonate formation.

Original language	English
Pages (from-to)	N4-N6
Journal	ECS Solid State Letters
Volume	1
Issue number	1
DOIs	https://doi.org/10.1149/2.014201ssl
State	Published - 2012

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@article{35544cc877514d8bad588a72ca1c95f3,

title = "Effects of oxygen source on film properties of atomic-layer-deposited la-silicate film using La[N(SiMe3)2]3",

abstract = "The effect of oxygen sources, i.e. O3 or H2O, on chemical composition, dielectric constant and leakage current density of atomiclayer- deposited La-silicate films was examined. The dielectric constant of La-silicate films grown using O3 was ∼8.0, which was lower than that of La-silicate films grown using H2O, ∼11.7 due to the higher Si concentrations. However, leakage current density of La-silicate films grown using O3 was about 3 orders of magnitude lower than that of La-silicate films grown using H2O at an identical capacitance-equivalent-thickness (but almost half the physical thickness), due to the higher Si concentrations and less La-carbonate formation.",

author = "Choi, \{Yu Jin\} and Won, \{Seok Jun\} and Jung, \{Hyung Suk\} and Sanghyun Park and Cho, \{Deok Yong\} and Hwang, \{Cheol Seong\} and Park, \{Tae Joo\} and Kim, \{Hyeong Joon\}",

year = "2012",

doi = "10.1149/2.014201ssl",

language = "English",

volume = "1",

pages = "N4--N6",

journal = "ECS Solid State Letters",

issn = "2162-8742",

number = "1",

}

TY - JOUR

T1 - Effects of oxygen source on film properties of atomic-layer-deposited la-silicate film using La[N(SiMe3)2]3

AU - Choi, Yu Jin

AU - Won, Seok Jun

AU - Jung, Hyung Suk

AU - Park, Sanghyun

AU - Cho, Deok Yong

AU - Hwang, Cheol Seong

AU - Park, Tae Joo

AU - Kim, Hyeong Joon

PY - 2012

Y1 - 2012

N2 - The effect of oxygen sources, i.e. O3 or H2O, on chemical composition, dielectric constant and leakage current density of atomiclayer- deposited La-silicate films was examined. The dielectric constant of La-silicate films grown using O3 was ∼8.0, which was lower than that of La-silicate films grown using H2O, ∼11.7 due to the higher Si concentrations. However, leakage current density of La-silicate films grown using O3 was about 3 orders of magnitude lower than that of La-silicate films grown using H2O at an identical capacitance-equivalent-thickness (but almost half the physical thickness), due to the higher Si concentrations and less La-carbonate formation.

AB - The effect of oxygen sources, i.e. O3 or H2O, on chemical composition, dielectric constant and leakage current density of atomiclayer- deposited La-silicate films was examined. The dielectric constant of La-silicate films grown using O3 was ∼8.0, which was lower than that of La-silicate films grown using H2O, ∼11.7 due to the higher Si concentrations. However, leakage current density of La-silicate films grown using O3 was about 3 orders of magnitude lower than that of La-silicate films grown using H2O at an identical capacitance-equivalent-thickness (but almost half the physical thickness), due to the higher Si concentrations and less La-carbonate formation.

UR - https://www.scopus.com/pages/publications/84880433202

U2 - 10.1149/2.014201ssl

DO - 10.1149/2.014201ssl

M3 - Journal article

AN - SCOPUS:84880433202

SN - 2162-8742

VL - 1

SP - N4-N6

JO - ECS Solid State Letters

JF - ECS Solid State Letters

IS - 1

ER -

Effects of oxygen source on film properties of atomic-layer-deposited la-silicate film using La[N(SiMe₃)₂]₃

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