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Effects of post-annealing temperature on the properties of ZnO nanorods grown on homogenous seed-layers by using the hydrothermal method

  • Kwang Gug Yim
  • , Min Su Kim
  • , Soaram Kim
  • , Jae Young Leem*
  • , Giwoong Nam
  • , Su Min Jeon
  • , Dong Yul Lee
  • , Jin Soo Kim
  • , Jong Su Kim
  • , Joo In Lee
  • *Corresponding author for this work
  • Inje University
  • Magnachip Semiconductor
  • Samsung
  • Yeungnam University
  • Korea Research Institute of Standards and Science

Research output: Contribution to journalJournal articlepeer-review

Abstract

Abstact: ZnO nanorods were grown on Si substrates by using the hydrothermal method; then, they were post-annealed at various temperatures ranging from 573 to 973 K. The effects of post-annealing temperature on the structural and the optical properties were investigated by using scanning electron microscopy (SEM), X-ray diffraction, and photoluminescence (PL). After the post-annealing process, small pores had been formed on the surface of the ZnO nanorods without any change in the shape of the ZnO nanorods. A tensile stress was observed in the as-grown and the post-annealed ZnO nanorods. The PL intensity ratio of the near-band-edge emission (NBE) to the deep-level emission (DLE) was enhanced, and the DLE peak shifted from yellow to orange emission with increasing post-annealing temperature. The activation energy of the post-annealed ZnO nanorods was increased by the post-annealing process.

Original languageEnglish
Pages (from-to)1605-1610
Number of pages6
JournalJournal of the Korean Physical Society
Volume60
Issue number10
DOIs
StatePublished - 2012.05

Keywords

  • Hydrothermal
  • Photoluminescence
  • Post-annealing
  • Scanning electron microscopy
  • Zinc oxide

Quacquarelli Symonds(QS) Subject Topics

  • Physics & Astronomy

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