@inproceedings{b859bd8518c34232a95d2994d36e4b0a,
title = "Effects of post-thermal annealing on the performance characteristics of Pd/GaN Schottky diodes hydrogen sensors",
abstract = "The Pd/GaN Schottky diode was investigated as the hydrogen gas sensors. The post-thermal annealing was found to improve the Schottky characteristics significantly, i.e., the reverse leakage current was 5.9×10-11 A at -5 V and the rectification ratio measured at ±1.0 V was 6.8 × 108. The hydrogen sensing characteristics was also significantly improved after thermal annealing, i.e., the maximum sensitivity obtained under reverse bias condition was ∼106, which was associated with the reduced Schottky barrier height.",
keywords = "GaN, hydrogen, Schottky diode, sensor",
author = "Youngran Choi and Hyunsoo Kim",
note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; 14th IEEE SENSORS ; Conference date: 01-11-2015 Through 04-11-2015",
year = "2015",
month = dec,
day = "31",
doi = "10.1109/ICSENS.2015.7370585",
language = "English",
series = "2015 IEEE SENSORS - Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2015 IEEE SENSORS - Proceedings",
}