| Original language | Korean |
|---|---|
| Journal | Japanese Journal of Applied Physics |
| State | Published - 2020.10.1 |
Cite this
- APA
- Author
- BIBTEX
- Harvard
- Standard
- RIS
- Vancouver
Effects of SiO2 passivation on the sheet carrier density of two-dimensional electron gas formed in the AlGaN/GaN interface
Research output: Contribution to journal › Journal article › peer-review