Effects of SiO2 encapsulation and laser processing on single CdTe/ZnTe quantum dots grown on Si (001) substrates

Hong Seok Lee; Armando Rastelli; Oliver G. Schmidt; Tae Whan Kim; In Won Lee

doi:10.3938/jkps.59.489

Effects of SiO₂ encapsulation and laser processing on single CdTe/ZnTe quantum dots grown on Si (001) substrates

Hong Seok Lee
, Armando Rastelli
, Oliver G. Schmidt
, Tae Whan Kim
, In Won Lee

Department of Physics

Gwangju Institute of Science and Technology
Leibniz Institute for Solid State and Materials Research Dresden
Hanyang University

Research output: Contribution to journal › Journal article › peer-review

1 Scopus citations

Abstract

Micro-photoluminescence (μ-PL) measurements are carried out to investigate the effects of SiO₂ encapsulation and laser processing of single CdTe/ZnTe quantum dots (QDs) grown on Si (001) substrates by using molecular beam epitaxy and atomic layer epitaxy. After laser processing, the μ- PL peak shift for the 200-nm SiO₂ capped single QD is larger than that of the as-grown sample. The large μ-PL peak shift in the 200-nm SiO₂ capped sample is related to the compressive stress induced by the ZnTe cap layer during laser processing. These results indicate that SiO₂ encapsulation and laser processing represent effective methods for achieving local wavelength tuning in single QDs.

Original language	English
Pages (from-to)	489-492
Number of pages	4
Journal	Journal of the Korean Physical Society
Volume	59
Issue number	21
DOIs	https://doi.org/10.3938/jkps.59.489
State	Published - 2011.08.12

Keywords

CdTe
Laser processing
Optical tuning
Single quantum dots
SiO2

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title = "Effects of SiO2 encapsulation and laser processing on single CdTe/ZnTe quantum dots grown on Si (001) substrates",

abstract = "Micro-photoluminescence (μ-PL) measurements are carried out to investigate the effects of SiO2 encapsulation and laser processing of single CdTe/ZnTe quantum dots (QDs) grown on Si (001) substrates by using molecular beam epitaxy and atomic layer epitaxy. After laser processing, the μ- PL peak shift for the 200-nm SiO2 capped single QD is larger than that of the as-grown sample. The large μ-PL peak shift in the 200-nm SiO2 capped sample is related to the compressive stress induced by the ZnTe cap layer during laser processing. These results indicate that SiO2 encapsulation and laser processing represent effective methods for achieving local wavelength tuning in single QDs.",

keywords = "CdTe, Laser processing, Optical tuning, Single quantum dots, SiO2",

author = "Lee, \{Hong Seok\} and Armando Rastelli and Schmidt, \{Oliver G.\} and Kim, \{Tae Whan\} and Lee, \{In Won\}",

year = "2011",

month = aug,

day = "12",

doi = "10.3938/jkps.59.489",

language = "English",

volume = "59",

pages = "489--492",

journal = "Journal of the Korean Physical Society",

issn = "0374-4884",

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TY - JOUR

T1 - Effects of SiO2 encapsulation and laser processing on single CdTe/ZnTe quantum dots grown on Si (001) substrates

AU - Lee, Hong Seok

AU - Rastelli, Armando

AU - Schmidt, Oliver G.

AU - Kim, Tae Whan

AU - Lee, In Won

PY - 2011/8/12

Y1 - 2011/8/12

N2 - Micro-photoluminescence (μ-PL) measurements are carried out to investigate the effects of SiO2 encapsulation and laser processing of single CdTe/ZnTe quantum dots (QDs) grown on Si (001) substrates by using molecular beam epitaxy and atomic layer epitaxy. After laser processing, the μ- PL peak shift for the 200-nm SiO2 capped single QD is larger than that of the as-grown sample. The large μ-PL peak shift in the 200-nm SiO2 capped sample is related to the compressive stress induced by the ZnTe cap layer during laser processing. These results indicate that SiO2 encapsulation and laser processing represent effective methods for achieving local wavelength tuning in single QDs.

AB - Micro-photoluminescence (μ-PL) measurements are carried out to investigate the effects of SiO2 encapsulation and laser processing of single CdTe/ZnTe quantum dots (QDs) grown on Si (001) substrates by using molecular beam epitaxy and atomic layer epitaxy. After laser processing, the μ- PL peak shift for the 200-nm SiO2 capped single QD is larger than that of the as-grown sample. The large μ-PL peak shift in the 200-nm SiO2 capped sample is related to the compressive stress induced by the ZnTe cap layer during laser processing. These results indicate that SiO2 encapsulation and laser processing represent effective methods for achieving local wavelength tuning in single QDs.

KW - CdTe

KW - Laser processing

KW - Optical tuning

KW - Single quantum dots

KW - SiO2

UR - https://www.scopus.com/pages/publications/79961243094

U2 - 10.3938/jkps.59.489

DO - 10.3938/jkps.59.489

M3 - Journal article

AN - SCOPUS:79961243094

SN - 0374-4884

VL - 59

SP - 489

EP - 492

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - 21

ER -

Effects of SiO₂ encapsulation and laser processing on single CdTe/ZnTe quantum dots grown on Si (001) substrates

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