Effects of temperature on current crowding of GaN-based light-emitting diodes

Eunjin Jung; Seongjun Kim; Hyunsoo Kim

doi:10.1109/LED.2012.2228841

Effects of temperature on current crowding of GaN-based light-emitting diodes

Eunjin Jung^*
, Seongjun Kim
, Hyunsoo Kim

^*Corresponding author for this work

Department of Semiconductor Science and Technology

Jeonbuk National University

Research output: Contribution to journal › Journal article › peer-review

12 Scopus citations

Abstract

The effects of temperature on the current crowding of GaN-based light-emitting diodes (LEDs) were investigated. At 300 K, LEDs fabricated with transparent ITO contacts on the p-layer (ITO-LEDs) showed a larger effective active area ratio (A_r) of 0.69, compared to 0.57 for LEDs fabricated with a reflective Ag contact. However, the A_r for ITO-LEDs decreased more rapidly with increasing temperature (0.28 at 440 K) than that for Ag-LEDs (0.31) due to the ITO-LEDs' higher junction temperature associated with a larger series resistance, resulting in a consistent and rapid drop of optical output power.

Original language	English
Article number	6403502
Pages (from-to)	277-279
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	34
Issue number	2
DOIs	https://doi.org/10.1109/LED.2012.2228841
State	Published - 2013

Keywords

Current crowding
light-emitting diode (LED)

Quacquarelli Symonds(QS) Subject Topics

Materials Science
Engineering - Electrical & Electronic
Engineering - Petroleum

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10.1109/LED.2012.2228841

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@article{2dd43010a1b04645aa18c3a3410f479b,

title = "Effects of temperature on current crowding of GaN-based light-emitting diodes",

abstract = "The effects of temperature on the current crowding of GaN-based light-emitting diodes (LEDs) were investigated. At 300 K, LEDs fabricated with transparent ITO contacts on the p-layer (ITO-LEDs) showed a larger effective active area ratio (Ar) of 0.69, compared to 0.57 for LEDs fabricated with a reflective Ag contact. However, the Ar for ITO-LEDs decreased more rapidly with increasing temperature (0.28 at 440 K) than that for Ag-LEDs (0.31) due to the ITO-LEDs' higher junction temperature associated with a larger series resistance, resulting in a consistent and rapid drop of optical output power.",

keywords = "Current crowding, light-emitting diode (LED)",

author = "Eunjin Jung and Seongjun Kim and Hyunsoo Kim",

year = "2013",

doi = "10.1109/LED.2012.2228841",

language = "English",

volume = "34",

pages = "277--279",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

number = "2",

}

TY - JOUR

T1 - Effects of temperature on current crowding of GaN-based light-emitting diodes

AU - Jung, Eunjin

AU - Kim, Seongjun

AU - Kim, Hyunsoo

PY - 2013

Y1 - 2013

N2 - The effects of temperature on the current crowding of GaN-based light-emitting diodes (LEDs) were investigated. At 300 K, LEDs fabricated with transparent ITO contacts on the p-layer (ITO-LEDs) showed a larger effective active area ratio (Ar) of 0.69, compared to 0.57 for LEDs fabricated with a reflective Ag contact. However, the Ar for ITO-LEDs decreased more rapidly with increasing temperature (0.28 at 440 K) than that for Ag-LEDs (0.31) due to the ITO-LEDs' higher junction temperature associated with a larger series resistance, resulting in a consistent and rapid drop of optical output power.

AB - The effects of temperature on the current crowding of GaN-based light-emitting diodes (LEDs) were investigated. At 300 K, LEDs fabricated with transparent ITO contacts on the p-layer (ITO-LEDs) showed a larger effective active area ratio (Ar) of 0.69, compared to 0.57 for LEDs fabricated with a reflective Ag contact. However, the Ar for ITO-LEDs decreased more rapidly with increasing temperature (0.28 at 440 K) than that for Ag-LEDs (0.31) due to the ITO-LEDs' higher junction temperature associated with a larger series resistance, resulting in a consistent and rapid drop of optical output power.

KW - Current crowding

KW - light-emitting diode (LED)

UR - https://www.scopus.com/pages/publications/84873056727

U2 - 10.1109/LED.2012.2228841

DO - 10.1109/LED.2012.2228841

M3 - Journal article

AN - SCOPUS:84873056727

SN - 0741-3106

VL - 34

SP - 277

EP - 279

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 2

M1 - 6403502

ER -

Effects of temperature on current crowding of GaN-based light-emitting diodes

Abstract

Keywords

Quacquarelli Symonds(QS) Subject Topics

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