Effects of the Hole Tunneling Barrier Width on the Electrical Characteristicin Silicon Quantum Dots Light-Emitting Diodes

Research output: Contribution to journal › Journal article › peer-review

Original language	Korean
Journal	JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
State	Published - 2011.04.20

Cite this

TY - JOUR

T1 - Effects of the Hole Tunneling Barrier Width on the Electrical Characteristicin Silicon Quantum Dots Light-Emitting Diodes

AU - Choi, Chel-Jong

PY - 2011/4/20

Y1 - 2011/4/20

M3 - Journal article

JO - JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS

JF - JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS

ER -