Efficiency droop in AlGaInP and GaInN light-emitting diodes

Jong In Shim; Dong Pyo Han; Hyunsung Kim; Dong Soo Shin; Guan Bo Lin; David S. Meyaard; Qifeng Shan; Jaehee Cho; E. Fred Schubert; Hyunwook Shim; Cheolsoo Sone

doi:10.1063/1.3694044

Efficiency droop in AlGaInP and GaInN light-emitting diodes

Jong In Shim^*
, Dong Pyo Han
, Hyunsung Kim
, Dong Soo Shin
, Guan Bo Lin
, David S. Meyaard
, Qifeng Shan
, Jaehee Cho
, E. Fred Schubert
, Hyunwook Shim
, Cheolsoo Sone

^*Corresponding author for this work

Department of Semiconductor Science and Technology

Hanyang University
Rensselaer Polytechnic Institute
Samsung

Research output: Contribution to journal › Journal article › peer-review

76 Scopus citations

Abstract

At room temperature, AlGaInP pn-junction light-emitting diodes (LEDs) emitting at 630 nm do not exhibit an efficiency droop. However, upon cooling the AlGaInP LEDs to cryogenic temperatures, they show a pronounced efficiency droop. We attribute the efficiency droop in AlGaInP LEDs to electron-drift- induced reduction in injection efficiency (i.e., carrier leakage out of the active region) mediated by the asymmetry of the pn junction, specifically the disparity between electron and hole concentrations and mobilities, with the concentration disparity exacerbated at low temperatures.

Original language	English
Article number	111106
Journal	Applied Physics Letters
Volume	100
Issue number	11
DOIs	https://doi.org/10.1063/1.3694044
State	Published - 2012.03.12

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@article{3971ed071f804c3086f3e9e158834c0a,

title = "Efficiency droop in AlGaInP and GaInN light-emitting diodes",

abstract = "At room temperature, AlGaInP pn-junction light-emitting diodes (LEDs) emitting at 630 nm do not exhibit an efficiency droop. However, upon cooling the AlGaInP LEDs to cryogenic temperatures, they show a pronounced efficiency droop. We attribute the efficiency droop in AlGaInP LEDs to electron-drift- induced reduction in injection efficiency (i.e., carrier leakage out of the active region) mediated by the asymmetry of the pn junction, specifically the disparity between electron and hole concentrations and mobilities, with the concentration disparity exacerbated at low temperatures.",

author = "Shim, \{Jong In\} and Han, \{Dong Pyo\} and Hyunsung Kim and Shin, \{Dong Soo\} and Lin, \{Guan Bo\} and Meyaard, \{David S.\} and Qifeng Shan and Jaehee Cho and \{Fred Schubert\}, E. and Hyunwook Shim and Cheolsoo Sone",

year = "2012",

month = mar,

day = "12",

doi = "10.1063/1.3694044",

language = "English",

volume = "100",

journal = "Applied Physics Letters",

issn = "0003-6951",

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TY - JOUR

T1 - Efficiency droop in AlGaInP and GaInN light-emitting diodes

AU - Shim, Jong In

AU - Han, Dong Pyo

AU - Kim, Hyunsung

AU - Shin, Dong Soo

AU - Lin, Guan Bo

AU - Meyaard, David S.

AU - Shan, Qifeng

AU - Cho, Jaehee

AU - Fred Schubert, E.

AU - Shim, Hyunwook

AU - Sone, Cheolsoo

PY - 2012/3/12

Y1 - 2012/3/12

N2 - At room temperature, AlGaInP pn-junction light-emitting diodes (LEDs) emitting at 630 nm do not exhibit an efficiency droop. However, upon cooling the AlGaInP LEDs to cryogenic temperatures, they show a pronounced efficiency droop. We attribute the efficiency droop in AlGaInP LEDs to electron-drift- induced reduction in injection efficiency (i.e., carrier leakage out of the active region) mediated by the asymmetry of the pn junction, specifically the disparity between electron and hole concentrations and mobilities, with the concentration disparity exacerbated at low temperatures.

AB - At room temperature, AlGaInP pn-junction light-emitting diodes (LEDs) emitting at 630 nm do not exhibit an efficiency droop. However, upon cooling the AlGaInP LEDs to cryogenic temperatures, they show a pronounced efficiency droop. We attribute the efficiency droop in AlGaInP LEDs to electron-drift- induced reduction in injection efficiency (i.e., carrier leakage out of the active region) mediated by the asymmetry of the pn junction, specifically the disparity between electron and hole concentrations and mobilities, with the concentration disparity exacerbated at low temperatures.

UR - https://www.scopus.com/pages/publications/84859986056

U2 - 10.1063/1.3694044

DO - 10.1063/1.3694044

M3 - Journal article

AN - SCOPUS:84859986056

SN - 0003-6951

VL - 100

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 11

M1 - 111106

ER -

Efficiency droop in AlGaInP and GaInN light-emitting diodes

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