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Efficiency droop in light-emitting diodes: Challenges and counter measures

  • Jaehee Cho
  • , E. Fred Schubert
  • , Jong Kyu Kim*
  • *Corresponding author for this work
  • Rensselaer Polytechnic Institute
  • Pohang University of Science and Technology

Research output: Contribution to journalReview articlepeer-review

Abstract

Efficiency droop, i.e. the loss of efficiency at high operating current, afflicts nitride-based light-emitting diodes (LEDs). The droop phenomenon is currently the subject of intense research, as it retards the advancement of solid-state lighting which is just starting to supplant fluorescent as well as incandescent lighting. Although the technical community does not yet have consented to a single cause of droop, this article provides a summary of the present state of droop research, reviews currently discussed droop mechanisms, and presents a recently developed theoretical model for the efficiency droop. In the theoretical model, carrier leakage out of the active region caused by the asymmetry of the pn junction, specifically the disparity between electron and hole concentrations and mobilities, is discussed in detail. The model is in agreement with the droop's key behaviors not only for GaInN LEDs but also for AlGaInP LEDs.

Original languageEnglish
Pages (from-to)408-421
Number of pages14
JournalLaser and Photonics Reviews
Volume7
Issue number3
DOIs
StatePublished - 2013.05

Keywords

  • Carrier asymmetry
  • Compound semiconductor
  • Efficiency droop
  • Light-emitting diode

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