Abstract
The work-function of MoS2 interfacial layers can be efficiently modulated by p- and n-doping treatments. As a result, the PCE of devices with a p-doped MoS2-based HTL is increased from ∼2.8 to ∼3.4%. Particularly, after n-doping the PCE was dramatically increased due to the change in work-function compared with un-doped MoS2 thin-films.
| Original language | English |
|---|---|
| Pages (from-to) | 3777-3783 |
| Number of pages | 7 |
| Journal | Journal of Materials Chemistry C |
| Volume | 1 |
| Issue number | 24 |
| DOIs | |
| State | Published - 2013.06.28 |
UN SDGs
This output contributes to the following UN Sustainable Development Goals (SDGs)
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SDG 7 Affordable and Clean Energy
Quacquarelli Symonds(QS) Subject Topics
- Materials Science
- Chemistry
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