Electric field-assisted patterning of few-layer MoTe₂ by scanning probe lithography

Transition metal dichalcogenides (TMDs) have been widely studied as attractive two-dimensional (2D) materials. In particular, specific TMD materials have attracted increasing attention because of their intriguing features as 2D topological insulators (TIs), which have a metallic edge state and bulk band gap. To realize next-generation devices that employ the metallic edge states of 2D TI materials, precise patterning of the edges is essential. In this study, we demonstrate a simple nanopatterning technique for 1 T’-MoTe₂, which is known to be a 2D TI material, using atomic force microscopy (AFM)-based scanning probe lithography (SPL). Our AFM-based SPL method entails delicately scratching a few-layer 1 T’-MoTe₂ sample while applying an electric field using a conductive AFM tip. The proposed method enables nanoscale lines, holes, and letters to be reliably patterned on the 1 T’-MoTe₂ sample. This study results in the development of a clean method that is compatible with existing mass-production facilities to fabricate various TMD materials for realizing next-generation electronic devices and for studying the underlying physics of these materials.