Electrical and microstructural characterization of Cu-germanide contacts formed on P-type Ge substrate

Yi Rang Lim; Ye Ji Lee; Min Sung Kang; Chang Hyun Leem; I. Jyothi; Ku Hwan Shim; Chel Jong Choi

doi:10.1149/06406.0159ecst

Electrical and microstructural characterization of Cu-germanide contacts formed on P-type Ge substrate

Yi Rang Lim^*
, Ye Ji Lee
, Min Sung Kang
, Chang Hyun Leem
, I. Jyothi
, Ku Hwan Shim
, Chel Jong Choi

^*Corresponding author for this work

Department of Semiconductor Science and Technology

Jeonbuk National University

Research output: Contribution to journal › Conference article › peer-review

5 Scopus citations

Abstract

We have investigated the electrical and microstructural properties of Cu-germanides formed on p-type Ge substrate as a function of rapid thermal annealing (RTA) temperature. As increasing RTA temperatures, Cu films reacted with Ge and formed Cu-germanides. The Cu₃Ge phase appears to be the dominant phase along with Cu₅Ge₂ phase at annealing temperatures of 500 and 600 °C. The sheet resistance and specific contact resistivity were investigated as a function of germanide formation temperature. A minimum specific contact resistivity value of 6.19×10^-6 Ωcm² is obtained after annealing at 400 °C associated with the formation of low stoichiometric Cu₃Ge phase. The sheet resistance and specific contact resistivity increased after rapid thermal annealing at temperatures >500 °C, indicated the degradation of the contact properties and could be associated with the formation of copper rich Cu₅Ge₂ phase and the loss of structural integrity with increasing annealing temperature.

Original language	English
Pages (from-to)	159-165
Number of pages	7
Journal	ECS Transactions
Volume	64
Issue number	6
DOIs	https://doi.org/10.1149/06406.0159ecst
State	Published - 2014
Event	6th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 2014 ECS and SMEQ Joint International Meeting - Cancun, Mexico Duration: 2014.10.5 → 2014.10.9

Quacquarelli Symonds(QS) Subject Topics

Engineering & Technology

Access to Document

10.1149/06406.0159ecst

Cite this

@article{02587b6c62084252b90576820db7f309,

title = "Electrical and microstructural characterization of Cu-germanide contacts formed on P-type Ge substrate",

abstract = "We have investigated the electrical and microstructural properties of Cu-germanides formed on p-type Ge substrate as a function of rapid thermal annealing (RTA) temperature. As increasing RTA temperatures, Cu films reacted with Ge and formed Cu-germanides. The Cu3Ge phase appears to be the dominant phase along with Cu5Ge2 phase at annealing temperatures of 500 and 600 °C. The sheet resistance and specific contact resistivity were investigated as a function of germanide formation temperature. A minimum specific contact resistivity value of 6.19×10-6 Ωcm2 is obtained after annealing at 400 °C associated with the formation of low stoichiometric Cu3Ge phase. The sheet resistance and specific contact resistivity increased after rapid thermal annealing at temperatures >500 °C, indicated the degradation of the contact properties and could be associated with the formation of copper rich Cu5Ge2 phase and the loss of structural integrity with increasing annealing temperature.",

author = "Lim, \{Yi Rang\} and Lee, \{Ye Ji\} and Kang, \{Min Sung\} and Leem, \{Chang Hyun\} and I. Jyothi and Shim, \{Ku Hwan\} and Choi, \{Chel Jong\}",

note = "Publisher Copyright: {\textcopyright} The Electrochemical Society.; 6th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 2014 ECS and SMEQ Joint International Meeting ; Conference date: 05-10-2014 Through 09-10-2014",

year = "2014",

doi = "10.1149/06406.0159ecst",

language = "English",

volume = "64",

pages = "159--165",

journal = "ECS Transactions",

issn = "1938-5862",

number = "6",

}

TY - JOUR

T1 - Electrical and microstructural characterization of Cu-germanide contacts formed on P-type Ge substrate

AU - Lim, Yi Rang

AU - Lee, Ye Ji

AU - Kang, Min Sung

AU - Leem, Chang Hyun

AU - Jyothi, I.

AU - Shim, Ku Hwan

AU - Choi, Chel Jong

N1 - Publisher Copyright: © The Electrochemical Society.

PY - 2014

Y1 - 2014

N2 - We have investigated the electrical and microstructural properties of Cu-germanides formed on p-type Ge substrate as a function of rapid thermal annealing (RTA) temperature. As increasing RTA temperatures, Cu films reacted with Ge and formed Cu-germanides. The Cu3Ge phase appears to be the dominant phase along with Cu5Ge2 phase at annealing temperatures of 500 and 600 °C. The sheet resistance and specific contact resistivity were investigated as a function of germanide formation temperature. A minimum specific contact resistivity value of 6.19×10-6 Ωcm2 is obtained after annealing at 400 °C associated with the formation of low stoichiometric Cu3Ge phase. The sheet resistance and specific contact resistivity increased after rapid thermal annealing at temperatures >500 °C, indicated the degradation of the contact properties and could be associated with the formation of copper rich Cu5Ge2 phase and the loss of structural integrity with increasing annealing temperature.

AB - We have investigated the electrical and microstructural properties of Cu-germanides formed on p-type Ge substrate as a function of rapid thermal annealing (RTA) temperature. As increasing RTA temperatures, Cu films reacted with Ge and formed Cu-germanides. The Cu3Ge phase appears to be the dominant phase along with Cu5Ge2 phase at annealing temperatures of 500 and 600 °C. The sheet resistance and specific contact resistivity were investigated as a function of germanide formation temperature. A minimum specific contact resistivity value of 6.19×10-6 Ωcm2 is obtained after annealing at 400 °C associated with the formation of low stoichiometric Cu3Ge phase. The sheet resistance and specific contact resistivity increased after rapid thermal annealing at temperatures >500 °C, indicated the degradation of the contact properties and could be associated with the formation of copper rich Cu5Ge2 phase and the loss of structural integrity with increasing annealing temperature.

UR - https://www.scopus.com/pages/publications/84921264898

U2 - 10.1149/06406.0159ecst

DO - 10.1149/06406.0159ecst

M3 - Conference article

AN - SCOPUS:84921264898

SN - 1938-5862

VL - 64

SP - 159

EP - 165

JO - ECS Transactions

JF - ECS Transactions

IS - 6

T2 - 6th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 2014 ECS and SMEQ Joint International Meeting

Y2 - 5 October 2014 through 9 October 2014

ER -

Electrical and microstructural characterization of Cu-germanide contacts formed on P-type Ge substrate

Abstract

Quacquarelli Symonds(QS) Subject Topics

Access to Document

Other files and links

Fingerprint

Cite this