Electrical and microstructural properties of Pt-germanides formed on p-type Ge substrate

V. Janardhanam; Jin Sung Kim; Kyungwon Moon; Young Boo Lee; Do Geun Kim; Seung Min Kang; Chel Jong Choi

doi:10.1149/1.3604398

Electrical and microstructural properties of Pt-germanides formed on p-type Ge substrate

V. Janardhanam^*
, Jin Sung Kim
, Kyungwon Moon
, Young Boo Lee
, Do Geun Kim
, Seung Min Kang
, Chel Jong Choi

^*Corresponding author for this work

Department of Semiconductor Science and Technology

Jeonbuk National University
Korea Basic Science Institute
Korea Institute of Materials Science
Hanseo University

Research output: Contribution to journal › Journal article › peer-review

10 Scopus citations

Abstract

We have investigated electrical and microstructural properties of Pt-germanides as a function of rapid thermal annealing (RTA) temperature. As increasing RTA temperatures, Pt films reacted with Ge and produced Pt-germanides. The Pt₂Ge₃ phase was completely transformed into PtGe₂ at the RTA temperatures in the excess of 500°C. The specific contact resistivity (_c) and sheet resistance (R_s) were investigated as a function of germanidation temperatures. Both _c and R_s increased after the RTA process of 400°C, and then decreased with increasing annealing temperature. The increase in R _s and _c at 400°C could be associated with the presence of a highly resistive Pt₂Ge₃ phase. RTA process at 700°C led to the severe degradation of surface and interface morphologies of a PtGe₂ film caused by the agglomeration. This could be responsible for the main contribution to the increase in R_s and _c.

Original language	English
Pages (from-to)	H846-H849
Journal	Journal of the Electrochemical Society
Volume	158
Issue number	8
DOIs	https://doi.org/10.1149/1.3604398
State	Published - 2011.08

Quacquarelli Symonds(QS) Subject Topics

Materials Science
Engineering - Electrical & Electronic
Chemistry
Physics & Astronomy

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@article{c3d17f3c694347a886448b7c0301b059,

title = "Electrical and microstructural properties of Pt-germanides formed on p-type Ge substrate",

abstract = "We have investigated electrical and microstructural properties of Pt-germanides as a function of rapid thermal annealing (RTA) temperature. As increasing RTA temperatures, Pt films reacted with Ge and produced Pt-germanides. The Pt2Ge3 phase was completely transformed into PtGe2 at the RTA temperatures in the excess of 500°C. The specific contact resistivity (c) and sheet resistance (Rs) were investigated as a function of germanidation temperatures. Both c and Rs increased after the RTA process of 400°C, and then decreased with increasing annealing temperature. The increase in R s and c at 400°C could be associated with the presence of a highly resistive Pt2Ge3 phase. RTA process at 700°C led to the severe degradation of surface and interface morphologies of a PtGe2 film caused by the agglomeration. This could be responsible for the main contribution to the increase in Rs and c.",

author = "V. Janardhanam and Kim, \{Jin Sung\} and Kyungwon Moon and Lee, \{Young Boo\} and Kim, \{Do Geun\} and Kang, \{Seung Min\} and Choi, \{Chel Jong\}",

year = "2011",

month = aug,

doi = "10.1149/1.3604398",

language = "English",

volume = "158",

pages = "H846--H849",

journal = "Journal of the Electrochemical Society",

issn = "0013-4651",

number = "8",

}

TY - JOUR

T1 - Electrical and microstructural properties of Pt-germanides formed on p-type Ge substrate

AU - Janardhanam, V.

AU - Kim, Jin Sung

AU - Moon, Kyungwon

AU - Lee, Young Boo

AU - Kim, Do Geun

AU - Kang, Seung Min

AU - Choi, Chel Jong

PY - 2011/8

Y1 - 2011/8

N2 - We have investigated electrical and microstructural properties of Pt-germanides as a function of rapid thermal annealing (RTA) temperature. As increasing RTA temperatures, Pt films reacted with Ge and produced Pt-germanides. The Pt2Ge3 phase was completely transformed into PtGe2 at the RTA temperatures in the excess of 500°C. The specific contact resistivity (c) and sheet resistance (Rs) were investigated as a function of germanidation temperatures. Both c and Rs increased after the RTA process of 400°C, and then decreased with increasing annealing temperature. The increase in R s and c at 400°C could be associated with the presence of a highly resistive Pt2Ge3 phase. RTA process at 700°C led to the severe degradation of surface and interface morphologies of a PtGe2 film caused by the agglomeration. This could be responsible for the main contribution to the increase in Rs and c.

AB - We have investigated electrical and microstructural properties of Pt-germanides as a function of rapid thermal annealing (RTA) temperature. As increasing RTA temperatures, Pt films reacted with Ge and produced Pt-germanides. The Pt2Ge3 phase was completely transformed into PtGe2 at the RTA temperatures in the excess of 500°C. The specific contact resistivity (c) and sheet resistance (Rs) were investigated as a function of germanidation temperatures. Both c and Rs increased after the RTA process of 400°C, and then decreased with increasing annealing temperature. The increase in R s and c at 400°C could be associated with the presence of a highly resistive Pt2Ge3 phase. RTA process at 700°C led to the severe degradation of surface and interface morphologies of a PtGe2 film caused by the agglomeration. This could be responsible for the main contribution to the increase in Rs and c.

UR - https://www.scopus.com/pages/publications/80051718864

U2 - 10.1149/1.3604398

DO - 10.1149/1.3604398

M3 - Journal article

AN - SCOPUS:80051718864

SN - 0013-4651

VL - 158

SP - H846-H849

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

IS - 8

ER -

Electrical and microstructural properties of Pt-germanides formed on p-type Ge substrate

Abstract

Quacquarelli Symonds(QS) Subject Topics

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