Abstract
The electrical and optical characteristics of GaN-based light-emitting diodes (LEDs) fabricated with emission wavelengths of 429-467 nm were investigated. The optical output increased with increasing emission wavelength, which is attributed to the enhanced quantum confinement effect as a result of indium composition fluctuation. With higher indium content, the LEDs exhibited unfavorable performance, including a larger efficiency droop, spectral blueshift, and spectral broadening, due to indium-induced strains. The effect of heterointerfaces associated with the indium content of the active region on the device resistance was negligible.
| Original language | English |
|---|---|
| Pages (from-to) | 885-889 |
| Number of pages | 5 |
| Journal | Current Applied Physics |
| Volume | 12 |
| Issue number | 3 |
| DOIs | |
| State | Published - 2012.05 |
Keywords
- Efficiency droop
- Electroluminescence
- Indium composition fluctuation
- Light-emitting diode
Quacquarelli Symonds(QS) Subject Topics
- Materials Science
- Physics & Astronomy
Fingerprint
Dive into the research topics of 'Electrical and optical characteristics of GaN-based light-emitting diodes fabricated with emission wavelengths of 429-467 nm'. Together they form a unique fingerprint.Cite this
- APA
- Author
- BIBTEX
- Harvard
- Standard
- RIS
- Vancouver